Two-bit/cell programming characteristics of high-density NOR-type flash memory device with recessed channel structure and spacer-type nitride layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 37-41, 2006, Pages

  Han, Kyoung Rok ^a   Lee, Jong Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

2 bit cell; Channel hot electron; Recessed channel; SONOS; Vth margin

Indexed keywords

DATA STORAGE EQUIPMENT; DOPING (ADDITIVES); NITRIDES;

CHANNEL HOT ELECTRON; NON-VOLATILE MEMORY (NVM); RECESSED CHANNEL;

FLASH MEMORY;

EID: 34547838870     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1027     Document Type: Article

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