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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4825-4830

Novel 2-bit/cell metal-oxide-nitride-oxide-semiconductor memory device with wrapped-control-gate structure that achieves source-side hot-electron injection

(4) Tomiye, Hideto a Terano, Toshio a Nomoto, Kazumasa a Kobayashi, Toshio a

a Sony Corporation Semiconductor Network Company (Japan)

Author keywords

Hot hole injection; MONOS; NVM; Source side injection

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; SEMICONDUCTOR DEVICES; SIMULATORS;

HOT-HOLE INJECTION; MONOS; NVM; SOURCE-SIDE INJECTION;

MOS DEVICES;

EID: 31544477701 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.4825 Document Type: Article

Times cited : (10)

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