Thermally unstable ruthenium oxide gate electrodes in metal/high-k: Gate stacks

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 1, 2008, Pages 2108-2111

  Kadoshima, Masaru ^a   Aminaka, Toshio ^a   Kurosawa, Etsuo ^a   Aoyama, Takayuki ^a   Nara, Yasuo ^a   Ohji, Yuzuru ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

CMOS; Fermi level pinning; High k; Metal gate; Ruthenium oxide; Threshold voltage

Indexed keywords

ANNEALING; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; LOGIC GATES; METALS; MOSFET DEVICES; OXIDE FILMS; POLYSILICON; PROBABILITY DENSITY FUNCTION; REFRACTORY METAL COMPOUNDS; RUTHENIUM; RUTHENIUM ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON; STRUCTURAL METALS; TANTALUM COMPOUNDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSISTORS; WORK FUNCTION;

CMOS; FERMI-LEVEL PINNING; HIGH-K; METAL GATE; RUTHENIUM OXIDE;

RUTHENIUM COMPOUNDS;

EID: 54249088022     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2108     Document Type: Article

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