Temperature effect on heavy-ion-induced single-event transient propagation in CMOS bulk 0.18 μm inverter chain

IEEE Transactions on Nuclear Science

Volumn 55, Issue 4, 2008, Pages 2001-2006

  Truyen, D ^a,b   Boch, J ^a   Sagnes, B ^a   Vaille J R ^a   Renaud, N ^b   Leduc, E ^b   Briet, M ^b   Heng, C ^b   Mouton, S ^b   Saigne F ^a  

^a UNIV MONTPELLIER   (France)

^b ATMEL Nantes   (France)

Author keywords

CMOS; Heavy ion; LET; Single event transient (SET); Technology computer aided design (TCAD) simulation; Temperature dependence

Indexed keywords

HEAVY IONS; ION BOMBARDMENT; IONS; STATIC RANDOM ACCESS STORAGE;

CMOS; HEAVY ION; LET; SINGLE EVENT TRANSIENT (SET); TECHNOLOGY COMPUTER-AIDED DESIGN (TCAD) SIMULATION; TEMPERATURE DEPENDENCE;

TRANSIENTS;

EID: 53349174898     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2000851     Document Type: Conference Paper

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