Temperature effect on heavy-ion induced parasitic current on SRAM by device simulation: Effect on SEU sensitivity

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1025-1029

  Truyen, D ^b,c   Boch, J ^b   Sagnes, B ^a,b   Renaud, N ^c   Leduc, E ^c   Arnal, S ^b   Saigne F ^b  

^a IEEE

^b UNIV MONTPELLIER   (France)

^c ATMEL Names   (France)

Author keywords

Heavy ion; Single event transient; Single event upset sensitivity; SRAM; Technology computer aided design (TCAD) simulation; Temperature dependence

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; HEAVY IONS; SENSITIVITY ANALYSIS; THERMAL EFFECTS; TRANSIENTS;

DEVICE SIMULATION; SINGLE EVENT UPSET (SEU); TRANSIENT CURRENTS;

STATIC RANDOM ACCESS STORAGE;

EID: 34548088831     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.894298     Document Type: Conference Paper

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