Resistance switching memory effect in transition metal oxide thin films

7th Annual Non-Volatile Memory Technology Symposium, NVMTS

Volumn , Issue , 2006, Pages 100-103

  Ignatiev, A ^a   Wu, N J ^a   Liu, S Q ^a   Chen, X ^a   Nian, Y B ^a   Papaginanni, C ^a   Strozier, J ^a   Xing, Z W ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

Atomic force microscopy; Oxygen migration; Resistance switching; RRAM; Thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE; METAL IONS; NONVOLATILE STORAGE; OXIDE FILMS; PEROVSKITE; PEROVSKITE SOLAR CELLS; RARE EARTHS; RRAM; SWITCHING; THIN FILM DEVICES; THIN FILMS; TRANSITION METALS;

CONFOCAL LASER SCANNING MICROSCOPY; ELECTRIC PULSE INDUCED RESISTANCES; OXYGEN MIGRATION; REDUCED POWER CONSUMPTION; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; SCANNING KELVIN PROBE MICROSCOPY; STRONGLY CORRELATED ELECTRON SYSTEM;

TRANSITION METAL OXIDES;

EID: 46849120977     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2006.378886     Document Type: Conference Paper

References (11)

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