Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions

Applied Surface Science

Volumn 255, Issue 1, 2008, Pages 78-80

  Gentils, A ^a   Barthe, M F ^a   Thome L ^b   Behar, M ^c  

^a CNRS   (France)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

^c FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Point defects and defect clusters; Positron annihilation; Radiation damage; Semiconductors

Indexed keywords

GOLD; IONS; IRRADIATION; POINT DEFECTS; POSITRON ANNIHILATION; POSITRONS; RADIATION DAMAGE; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE DEFECTS; WIDE BAND GAP SEMICONDUCTORS;

DEFECTS INDUCED; DOPPLER; ION FLUENCES; IRRADIATION-INDUCED DEFECTS; POINT DEFECTS AND DEFECT CLUSTERS; POSITRON BEAMS; SIC SINGLE CRYSTALS;

SINGLE CRYSTALS;

EID: 53249090389     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.166     Document Type: Article

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