Simultaneous formation of Ni/Al ohmic contacts to both n- and p-type 4H-SiC

Journal of Electronic Materials

Volumn 37, Issue 11, 2008, Pages 1674-1680

  Ito, Kazuhiro ^a   Onishi, Toshitake ^a   Takeda, Hidehisa ^a   Kohama, Kazuyuki ^a   Tsukimoto, Susumu ^a   Konno, Mitsuru ^b   Suzuki, Yuya ^b   Murakami, Masanori ^a,c  

^a KYOTO UNIVERSITY   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

^c Ritsumeikan Trust   (Japan)

Author keywords

4H SiC; Ni Al; Ohmic contacts; Simultaneous formation

Indexed keywords

4H-SIC; CONTACT MATERIALS; FABRICATION PROCEDURE; LAYER THICKNESSES; METAL-OXIDE SEMICONDUCTORS; NI/AL; OHMIC BEHAVIORS; ONE-STEP ANNEALING; SIMULTANEOUS FORMATION; SPECIFIC CONTACT RESISTANCES;

ALUMINUM; ANNEALING; CHARGE COUPLED DEVICES; CONTACTS (FLUID MECHANICS); ELECTRIC CONTACTORS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; OHMIC CONTACTS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDE; TRANSISTORS; VACUUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 53149087407     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0525-1     Document Type: Article

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