Epitaxial FexNi1-x thin film contacts to GaAs via electrochemistry

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Bao, Zhi Liang ^a   Majumder, Sarmita ^a   Talin, A Alec ^b   Arrott, Anthony S ^a   Kavanagh, Karen L ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b Schafer Livermore Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLIZING;

GALVANOSTATIC;

ELECTRODEPOSITION;

EID: 52649085796     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2969431     Document Type: Article

References (38)

1. G. Woltersdorf, M. Buess, B. Heinrich, and C. H. Back, Phys. Rev. Lett., 95, 037401 (2005).
2. G. Woltersdorf and B. Heinrich, Phys. Rev. B, 69, 184417 (2004).
3. X. Lou, C. Adelmann, M. Furis, S. A. Crooker, C. J. Palmstrøm, and P. A. Crowell, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.176603, 96, 176603 (2006); C. Adelmann, J. Q. Xie, C. J. Palmstrøm, J. Strand, X. Lou, J. Wang, and P. A. Crowell, J. Vac. Sci. Technol. B, 23, 1747 (2005).
4. A. T. Hanbicki, O. M. J. van't Erve, R. Magno, G. Kioseoglou, C. H. Li, B. T. Jonker, G. Itskos, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett., 82, 4092 (2003).
5. J. R. Waldrop, J. Vac. Sci. Technol. B, 2, 445 (1984).
6. B. T. Jonker, O. J. Glembocki, R. T. Holm, and R. J. Wagner, Phys. Rev. Lett., 79, 4886 (1997).
7. D. O. Demchenko and A. Y. Liu, Phys. Rev. B, 73, 115332 (2006).
8. X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, Phys. Rev. Lett., 94, 056601 (2005).
9. W. Schindler and J. Kirschner, Phys. Rev. B, 55, R1989 (1997).
10. N.-J. Wu, T. Hashizume, H. Hasegawa, and Y. Amemiya, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.34.1162, 34, 1162 (1995); T. Sato, C. Kaneshiro, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1, 38, 1103 (1999).
11. P. Allongue and E. Souteyrand, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.583642, 5, 1644 (1987); A. de. Vrieze, K. Strubbe, W. P. Gomes, S. Forment, and R. L. can Meirhaeghe, Phys. Chem. Chem. Phys., 3, 5297 (2001).
12. M. E. Kiziroglou, A. A. Zhukov, X. Li, D. C. Gonzalez, P. A. J. de Groot, P. N. Bartlett, and C. H. de Groot, Solid State Commun., 140, 508 (2006).
13. D.-M. Smilgies, R. Feidenhans'l, G. Scherb, D. M. Kolb, A. Kazimirov, and J. Zegenhagen, Surf. Sci., 367, 40 (1996).
14. R. Hart, P. A. Midgley, A. Wilkinson, and W. Schwarzacher, Appl. Phys. Lett., 67, 1316 (1995).
15. A. Ford, J. E. Bonevich, R. D. McMichel, M. Vaudin, and T. P. Moffat, J. Electrochem. Soc., 150, C753 (2003).
16. Y.-K. Liu, C. Scheck, R. Schad, and G. Zangari, Electrochem. Solid-State Lett., 7, D11 (2004).
17. C. Scheck, P. Evans, R. Schad, and G. Zangari, J. Appl. Phys. 0021-8979 10.1063/1.1543916, 93, 7634 (2003); P. Evans, C. Scheck, R. Schad, and G. Zangari, J. Magn. Magn. Mater. 0304-8853 10.1016/S0304-8853(02)01403-8, 260, 467 (2003); C. Scheck, Y. K. Liu, P. Evans, R. Schad, and G. Zangari, J. Appl. Phys., 95, 6549 (2004); NiGaAs; P. Evans, C. Scheck, R. Schad, and G. Zangari, Proceedings of Morphological Evolution of Electrodeposits and Electrochemical Processing in ULSI Fabrication and Electrodeposition of and on Semiconductor IV, Vol. 2001-08, Electrochemical Society (2005).
18. S. Vutukuri, R. Schad, C. Alexander, Jr., G. Zangari, L. Sorba, G. Biasiol, and S. Heun, Electrochem. Solid-State Lett., 11, D43 (2008).
19. Z. L. Bao and K. L. Kavanagh, J. Appl. Phys., 98, 066103 (2005).
20. E. B. Svedberg, J. J. Mallett, L. A. Bendersky, A. G. Roy, E. F. Egelhoff, Jr., and T. P. Moffat, J. Electrochem. Soc., 153, C807 (2006).
21. Z. L. Bao and K. L. Kavanagh, J. Cryst. Growth, 287, 514 (2006).
22. J. J. Mallett, E. B. Svedberg, M. D. Vaudin, L. A. Bendersky, A. J. Shapiro, W. F. Egelhoff, and T. P. Moffat, Phys. Rev. B, 75, 085304 (2007).
23. Z. L. Bao and K. L. Kavanagh, Appl. Phys. Lett., 88, 022102 (2006).
24. A. Hirohata, Y. B. Xu, C. M. Guertler, J. A. C. Bland, and S. N. Holmes, J. Magn. Magn. Mater., 226-230, 914 (2001).
25. S. Khmelevskyi and P. Mohn, Phys. Rev. B, 71, 144423 (2005).
26. L. C. Chen, D. A. Caldwell, T. G. Finstad, and C. J. Palmstrøm, J. Cryst. Growth, 201, 146 (1999).
27. E. Raub and K. Müller, Fundamentals of Metal Deposition, Elsevier, New York (1967).
28. M. V. Lebedev, D. Ensling, R. Hunger, T. Mayer, and W. Jaegermann, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc.2004.01.067, 229, 225 (2004); Y. Yuan and P. D. Ye, IEEE Trans. Electron Devices, 54, 1811 (2007).
29. J. O'M. Bockris and A. K. N. Reddy, Modern Electrochemistry, Vol. 1, Chap., Plenum, New York (1970).
30. D. D. MacDonald, Transient Techniques in Electrochemistry, Plenum, New York (1977); J. R. de Bruyn, Phys. Rev. E, 56, 3326 (1997).
31. G. E. F. Brewer, Electrodeposition of Coatings, Advanced Chemistry Series 119, American Chemical Society, Washington, DC (1973).
32. E. A. Owen, E. L. Yates, and A. H. Sully, Proc. Phys. Soc. London, 49, 315 (1937).
33. M. Shiga, IEEE Trans. Magn., 8, 666 (1972).
34. K. Y. Sasaki and J. B. Talbot, J. Electrochem. Soc., 147, 189 (2000).
35. J. Horkans, J. Electrochem. Soc., 128, 45 (1981).
36. W. C. Grande and J. B. Talbot, J. Electrochem. Soc., 140, 669 (1993).
37. D. Grujicic and B. Pesic, Electrochim. Acta, 49, 4719 (2004).
38. A. V. Ruban, S. Khmelevskyi, P. Mohn, and B. Johansson, Phys. Rev. B, 76, 014420 (2007).