MBE growth and in situ electrical characterization of metal/semiconductor structures

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 146-149

  Chen, L C ^a   Caldwell, D A ^a   Muller T A ^a   Finstad, T G ^b   Schildgen, W ^a   Palmstrom C J ^a  

^a University of Minnesota   (United States)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NICKEL; SEMICONDUCTING GALLIUM ARSENIDE;

SCHOTTKY BARRIER HEIGHT; SOLID STATE REGROWTH;

SEMICONDUCTOR GROWTH;

EID: 0032642936     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01312-8     Document Type: Article

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