High density 3D integration

Proceedings, 2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008

Volumn , Issue , 2008, Pages

  Yu, Roy ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; TECHNOLOGY;

3-D INTEGRATION; CMOS SCALING; ELECTRONIC PACKAGING; HIGH-DENSITY; HIGH-DENSITY PACKAGING; INTERNATIONAL CONFERENCES; WAFER LEVELS;

TECHNOLOGY TRANSFER;

EID: 52449107817     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEPT.2008.4606934     Document Type: Conference Paper

References (48)

1. G. Moore, Electronics, V38, ppi 14, 1965
2. 2007 ITRS, http://www.ITRS.org/
3. S. Joshi, et al, DRC2007 pp.53 - 54
4. T.C. Chen, ICSICT2006, pp4-7.
5. G.G. Shahidi, IEEE-CICC 2007, pp413-416.
6. G. Amdahl, AFIPS Conference Proceedings, (30), pp.483-485, 1967.
7. J.E. Fritts and E.D. Chamberlain, proc. 35th Simulations Symposium. 2002. Page(s):352 - 362
8. S. Kapoor; HLVDT2007. Page(s):48 - 52
9. B. stolt et al, V43No. 1, Jan. 2008 pp21 - 28, JSSC.2007.
10. S.R Vangal et al, V43No.l, 2008, pp29 -41, JSSC.2007.
11. L. Chai, et al, CCGRID2007. pp471-478
12. R. Bergamaschi et al, ASPDAC2008. pp.708-713
13. P. Jacob et al, IEEE Design&test, V22,No.6, 2005, pp540-547
14. P. Leduc et al, Proc. IEEE (IITC), pp. 210-212, 2007.
15. P.S. Andry, et al, Proc. of the 56th ECTC, pp. 831-837, 2006.
16. P. R. Morrow et al, IEEE Elect. Dev. Lett. 27, 335-337 (2006).
17. [17a] Va1, C.; Lemoine, T.; IEEE Trans. on Components, Packaging, and Manufacturing Technology, Part A, B, C] V13, I4, Dec. 1990 Page(s):814-821
18. [17b] M. Karnezos; IEMT.2004. pp64-67
19. K. Takahashi, et al; ECTC Vol. 1,2004 Pp.601 - 609
20. E. Beyne; VTSA.2006.pp1-9
21. S. C. Jonson, Semiconductor International, pp. 40-45, June, 2007.
22. K.-N. Chen, et al, IEDM Tech. Digest, 20-22 (2006).
23. K. W. Guarini, et al, IEDM Tech. Digest, 943-946 (2003).
24. J.A. Burns, et al, IEEE tran. Elec. Devices, V53, No. 10, pp2507-2515, Oct. 2006.
25. M. Wiemer et al, ESTC2006 pp. 1401-1405
26. D. Temple, et al, IEDM2006, pp:1 - 4
27. R.S. Patti, Proc. OfIEEE V. 94,16, June 2006 Ppl214 -1224
28. G.A. Katopis, et al, IBM J. Res.develop. Vol 43, No. 5/6, (1999), p621.
29. K. Prasad and E. Perfecto, IEEE trans. Comp. Pkg. Mfg. Techno. Part B, Adv. Pkg., Vol 17, No.1 (1994) p38.
30. C. Narayan, et al., IEEE trans. Comp. Pkg. Mfg. Tech., Part B, Vol 18, Issue 1, 1995, p42
31. United States Patent 6,281,452, Prasad , et al. August 28, 2001
32. E. Perfecto, et al, IEEE trans.Adv.Pkg., Vol 23, No.3 (2000), p1.
33. United States Patent 6,099,935, Brearley , et al. August 8, 2000.
34. H. B. Pogge et al., Proc. AMC'2001, pp.129-136,2001;
35. [34a] K. Kanakarajan and John A. Kreuz, US patent 5298331 (1994).
36. [34b] R. K. Kanakarajan, IPC national conf. On Flex Circuits, 1995, Minneapolis, MN
37. th Symposium on Polymers for Microelectronics, May 2002, Wilmington, DE, Session III-3.
38. R. Yu, proc. VMIC2007, p223-230.
39. F. Liu, et al, to be published.
40. [37a] M. Despont, et al; TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003 ,Volume 2, 8-12 June 2003 Page(s): 1907-1910 vol.2
41. [37b] R. Guerre, et al, JMEMS, 2007, V17, No1, p157-165.
42. [37c] M.J. Wolf et al; ECTC2008.Page(s):563 - 570 via fill
43. United States Patent 6,640,021, Pogge , et al. October 28, 2003
44. United States Patent 6,444,560, Pogge, et al. September 3, 2002
45. United States Patent 6,090,633, Yu , et al. July 18, 2000.
46. United States Patent 6,835,589, Pogge , et al.
47. United States Patent 6,856,025, Pogge , et al. February 15, 2005
48. D. Gerty, (THERMINIC 2007), Budapest, Hungary, Sep. 17-19, 2007.