Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 24-27, 2005, Pages

  Ichikawa, Kazunori ^a   Punchaipetch, Prakaipetch ^a   Yano, Hiroshi ^a   Hatayama, Tomoaki ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Takahashi, Eiji ^b   Hayashi, Tsukasa ^b   Ogata, Kiyoshi ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

Floating gate; MOSFET; Plasma enhanced chemical vapor deposition; Quantum effect; Si nanodot

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTRONS; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON CHARGING; FLOATING GATE; QUANTUM EFFECT; SI NANODOT;

NANOSTRUCTURED MATERIALS;

EID: 32044449829     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L836     Document Type: Article

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