Nanotwin formation and its physical properties and effect on reliability of copper interconnects

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2155-2158

  Xu, Di ^a   Sriram, Vinay ^a   Ozolins, Vidvuds ^a   Yang, Jenn Ming ^a   Tu, K N ^a   Stafford, Gery R ^b   Beauchamp, Carlos ^b   Zienert, Inka ^c   Geisler, Holm ^c   Hofmann, Petra ^c   Zschech, Ehrenfried ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Electromigration; First principles calculations; Free standing Cu interconnect; Nanotwin

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; GRAIN GROWTH; IMAGING TECHNIQUES; OPTICAL INTERCONNECTS; SILICON; STRESSES; TECHNOLOGY;

AIR GAPS; COPPER INTERCONNECTS; CU FILM; CU INTERCONNECTS; ELECTRICAL CONDUCTIVITY; ELECTROMIGRATION; ELECTRON BACK-SCATTER DIFFRACTION; FIRST PRINCIPLES CALCULATIONS; FREE-STANDING CU INTERCONNECT; HIGH STRESS; HIGH-DENSITY; IN-SITU STRESSES; MECHANICAL STRENGTHS; MICROELECTRONIC TECHNOLOGIES; NANO SCALING; NANOTWIN; PHYSICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY (SEM); STRESS-RELAXATION; TOTAL ENERGIES; TRANSMISSION ELECTRON MICROSCOPY (TEM); TWIN BOUNDARIES; ULTRA-FINE GRAINED COPPER;

COPPER;

EID: 52149111379     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.035     Document Type: Article

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