Advanced Cu interconnects using air gaps

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 321-332

  Gosset, L G ^a   Farcy, A ^b   De Pontcharra, J ^c   Lyan, Ph ^c   Daamen, R ^d   Verheijden, G J A M ^d   Arnal, V ^b   Gaillard, F ^c   Bouchu, D ^c   Bancken, P H L ^d   Vandeweyer, T ^d   Michelon, J ^d   Hoang, V Nguyen ^d   Hoofman, R J O M ^d   Torres, J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Air gap; Copper interconnects; Dual damascene architecture; PE CVD dielectrics; Polymers; Reliability; Sacrificial materials

Indexed keywords

CROSSTALK; INTEGRATED CIRCUITS; OPTICAL INTERCONNECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMERS; RELIABILITY;

AIR GAP; COPPER INTERCONNECTS; DUAL DAMASCENCE ARCHITECTURE; PE-CVD CHARACTERISTICS; SACRIFICIAL MATERIALS;

COPPER;

EID: 28044440677     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.014     Document Type: Conference Paper

References (21)

1. J.D. Meindl, J.A. Davis, P. Zarkesh-Ha, C.S. Patel, K.P. Martin, and P.A. Kohl IBM J. Res. & Dev. 46 2002 245 261
2. V. Arnal, L.G. Gosset, W.F.A. Besling, A. Farcy, L.-L. Chapelon, A. Fuchsmann, J. Vitiello, S. Chhun, M. Aimadeddine, C. Guedj, J.-F. Guillaumond, J. Torres, in: Proceedings of the ElectroChemical Society Spring Meeting 2005.
3. A. Farcy, O. Cueto, B. Blampey, T. Lacrevaz, B. Fléchet, F. de Crécy, J. Torres, in: Proceedings of the Eighth IEEE Workshop on Signal Propagation in Interconnect (SPI), Heidelberg, May 2004.
4. K. Banerjee, S.J. Souri, P. Kapur, and K.C. Saraswat Proc. IEEE 89 No. 5 2001 602 633
5. T. Ueda, E. Tamaoka, K. Yamashita, N. Aoi, S. Mayumi, in: Proceedings of 1998 VLSI Symposium, 1998, pp. 46-47.
6. L.C. Bassman, R.P. Vinci, B.P. Shieh, D.-K. Kim, J.P. McVittie, K.C. Saraswat, and M.D. Deal Mat. Res. Soc. Symp. Proc. 473 1997 323 328
7. B. Shieh, K.C. Saraswat, J.P. McVittie, S. List, S. Nag, M. Islamraja, and R.H. Havemann IEEE EDL 19 No. 1 1998 16 18
8. V. Arnal, J. Torres, Ph. Gayet, M. Haond, Ch. Vérove, B. Descouts, Ph. Spinelli, in: Proceedings of the AMC, 2000, pp. 71-86.
9. V. Arnal, J. Torres, Ph. Gayet, R. Gonella, Ph. Spinelli, M. Guillermet, Ch. Vérove, in: Proceedings of the IITC 2001, pp. 298-300.
10. V. Arnal, J. Torres, J.-Ph. Reynard, Ph. Gaillet, Ch. Vérove, M. Guillermet, and Ph. Spinelli Microelectron. Eng. 60 2002 143 148
11. L.G. Gosset, V. Arnal, Ph. Brun, M. Broekaart, C. Monget, N. Casanova, M. Rivoire, J.-C. Oberlin, and J. Torres Microelectron. Eng. 70 2003 274 279
12. Z. Gabric, W. Palmer, G. Schindler, W. Steinhögl, M. Traving, in: Proceedings of the IITC 2004, pp. 151-153.
13. L.G. Gosset, V. Arnal, C. Prindle, R. Hoofman, G. Verheijden, R. Daamen, L. Broussous, F. Fusalba, M. Assous, R. Chatterjee, J. Torres, D. Gravesteijn, K.C. Yu, in: Proceedings of the IITC 2003, pp. 65-67.
14. C.-K. Lu, L. Gignac, R. Rosenberg, E. Liniger, J. Rubino, C. Sambucetti, A. Stamper, A. Domenicucci, and X. Chen Microelectron. Eng. 70 2003 406 411
15. J. Noguchi, K. Sato, N. Konishi, S. Uno, T. Oshima, U. Tanaka, K. Ishikawa, H. Ashihara, T. Saito, M. Kubo, H. Aoki, T. Fujiwara, in: Proceedings of the IITC 2004, pp. 81-83.
16. M.B. Anand, M. Yamada, H. Shibata, in: IEEE Symposium on VLSI Technology Digest, 1996, pp. 82-83.
17. C.-H. Chen, Y.-K. Fang, C.-S. Lin, C.-W. Yang, and J.-C. Hsieh Solid-State Electron. 45 2001 199 203
18. P.A. Kohl, D.M. Bhusari, M. Wedlake, F.P. Klemens, J. Miner, B.-C. Lee, and R.J. Gutmann IEEE EDL 21 12 2000 557 559
19. J. Alieu, Ch. Lair, M. Haond, FR patent 2784230-A1, 1998.
20. R.H. Havemann, US patent 5 461 003, 1995.
21. J.-P. Gueneau de Mussy, G. Beyer, K. Maex, in: E. Zschech, C. Whelan, T. Mikolajick (eds.), Published in materials for information technology, Springer, 2005.