Cu grain growth in interconnects trenches - Experimental characterization of the overburden effect

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2133-2136

  Carreau, V ^a,b   Maitrejean, S ^a   Brechet, Y ^b   Verdier, M ^b   Bouchu, D ^a   Passemard, G ^a  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

Copper; Grain growth; Interconnects; Narrow lines; Overburden

Indexed keywords

COPPER; CRYSTAL GROWTH; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METALS; MICROSTRUCTURE;

COPPER LINES; ELECTRICAL RESULTS; EXPERIMENTAL CHARACTERIZATION; INTERCONNECTS; METAL RESISTIVITY; NARROW LINES; OVERBURDEN; OVERBURDEN EFFECTS; TOP SURFACE;

GRAIN GROWTH;

EID: 52149108715     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.049     Document Type: Article

References (19)

1. International Technology Roadmap for Semiconductors .
2. Jiang Q.-.T., Nowell M., Foran B., Frank A., Haveman R.H., Parihan V., Augur R.A., and Luttmer J.D. J. Electron. Mater. 31 1 (2002) 10-15
3. Sondheimer E.H. Adv. phys. 1 1 (1952) 1-42
4. Mayadas A.F., and Shatzkes M. Phys. Rev. B 1 4 (1970) 1382-1389
5. J.F. Guillaumond, L. Arnaud, T. Mourier, M. Fayolle, O. Pesci, G. Reimbold, in: International Interconnect Technology Conference 2002 (IITC 2002), IEEE, San Francisco, CA, pp. 132-134.
6. W. Steinhoegl, G. Schindler, G. Steinlesberger, M. Traving, M. Engelhardt, in: International Conference on Simulation of Semiconductor Processes and Devices 2003 (SISPAD 2003), IEEE, Boston, MA, 2003, pp. 27-30.
7. Chen F., and Gardner D. IEEE Electr. Device L. 19 12 (1998) 508-510
8. Hinode K., Hanaoka Y., Takeda K., and Kondo S. Jpn. J. Appl. Phys. 40 (2001) L1097-L1099
9. Rossnagel S.M., and Kuan T.S. J. Vac. Sci. Technol., B 22 (2004) 240-247
10. Wu W., Brongersma S.H., Van Hove M., and Maex K. Appl. Phys. Lett. 84 (2004) 2838-2840
11. Zhang W., Brongersma S.H., Clarysse T., Terzieva V., Rosseel E., Vandervorst W., and Maex K. J. Vac. Sci. Technol., B 22 4 (2004) 1830-1833
12. F. Chen, J. Gambino, T. Sullivan, J. Gill, B. Li, D. Meatyard, in: Advanced Metallization Conference 2005 (AMC 2005), MRS, Warendalle PA, pp. 103-108.
13. Steinhogl W., Schindler G., Steinlesberger G., Traving M., and Engelhardt M. J. Appl. Phys. 97 (2005) 023706
14. Maîtrejean S., Gers R., Mourier T., Toffoli A., and Passemard G. Microelectron. Eng. 83 11-12 (2006) 2396-2401
15. S. Maîtrejean, T. Mourier, P. Chausse, V. Safraoui, M. Cordeau, J. Torres, G. Passemard, in: Advanced Metallization Conference 2006 (AMC 2006), MRS, San Diego, CA, 2006, pp. 83-89.
16. Carreau V., Maîtrejean S., Verdier M., Bréchet Y., Roule A., Toffoli A., Delaye V., and Passemard G. Microelectron. Eng. 84 11 (2007) 2723-2728
17. Gangulee A. J. Appl. Phys. 42 3 (1972) 867-873
18. Lingk C., and Gross M.E. J. Appl. Phys. 84 10 (1998) 5547-5553
19. Yahiro Y., Kaneko K., Fujita T., Moon W.-J., and Horita Z. J. Electron Microsc. 5 5 (2004) 571-576