Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Kojima, K ^a   Nishizawa, S ^a   Kuroda, S ^a   Okumura, H ^a   Arai, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Computer simulation; A1. Defect; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL DEFECTS; EPITAXIAL GROWTH; LEAKAGE CURRENTS; PROBABILITY; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

BASAL PLANE DISLOCATIONS; GROWTH RATE; MICROPIPE (MP) FILLING; THREADING EDGE DISLOCATIONS;

SILICON CARBIDE;

EID: 15944365136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.071     Document Type: Conference Paper

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