SiC-seeded crystal growth

MRS Bulletin

Volumn 22, Issue 3, 1997, Pages 30-35

  Glass, R C ^a   Henshall, D ^a   Tsvetkov, V F ^a   Carter Jr , C H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); MESFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON WAFERS; SUBLIMATION; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

MICROPIPE DEFECTS; MICROPIPES; MOSAIC STRUCTURE; PHYSICAL VAPOR DEPOSITION; PHYSICAL VAPOR TRANSPORT; POLYTYPISM;

SILICON CARBIDE;

EID: 0031098060     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400032735     Document Type: Article

References (13)

1. An efficient search of the latest work from these groups is accomplished by reading chapter 1 in Proc. 6th Int. Conf. SiC Related Mater. 1995, edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 1.
2. P.G. Neudeck and J.A. Powell, IEEE Electron Device Lett. 15 (2) (1994) p. 63.
3. Yu.M. Tairov and V.F. Tsvetkov, J. Cryst. Growth 43 (2) (1978) p. 209.
4. R.F. Davis, C.H. Carter, Jr., and C.E. Hunter, U.S. Patent No. Re 34,861 (February 14, 1995).
5. R.A. Stein and P. Lanig, Mater. Sci. Eng. B 11 (1992) p. 69.
6. D.L. Barrett, J.P. McHugh, H.M. Hobgood, R.H. Hopkins, P.G. McMullin, and R.C. Clarke, J. Cryst. Growth 128 (1993) p. 358.
7. M. Tuominen, R. Yakimova, A.S. Bakin, I.G. Ivanov, A. Henry, A. Vehanen, and E. Janzen, in 6th Int. Conf. SiC Related Mater., edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 45.
8. R.A. Stein, Physica B 185 (1993) p. 211.
9. N. Takanaka, S. Nishino, and J. Saraie, in Proc. 6th Int. Conf. SiC Related Mater., edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 813.
10. S. Wang, M. Dudley, C.H. Carter, Jr., V.F. Tsvetkov, and C. Fazi, in Applications of Synchrotron Radiation Techniques to Materials Science II, edited by L.J. Terminello, N.D. Shinn, G.E. Ice, K.L. d'Amico, and D.L. Perry (Mater. Res. Soc. Symp. Proc. 375, Pittsburgh, 1995) p. 281.
11. R.C. Glass, L-O. Kjellberg, V.F. Tsvetkov, J-E. Sundgren, and E. Janzén, J. Cryst. Growth 132 (1993) p. 504.
12. I. Sunagawa and P. Bennema, ibid. 53 (1981) p. 490.
13. H.M. Hobgood, R.C. Glass, G. Augustine, R.H. Hopkins, J. Jenny, M. Skowronski, W.C. Mitchel, and M. Roth, Appl. Phys. Lett. 66 (1995) p. 1364.