-
1
-
-
0032516989
-
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
-
Alers G.B., Werder D.J., Chabal Y., Lu H.C., Gusev E.P., Garfunkel E., Gustafsson T., and Urdahl R.S. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures. Appl. Phys. Lett. 73 (1998) 1517
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1517
-
-
Alers, G.B.1
Werder, D.J.2
Chabal, Y.3
Lu, H.C.4
Gusev, E.P.5
Garfunkel, E.6
Gustafsson, T.7
Urdahl, R.S.8
-
2
-
-
84927688800
-
Recent advances in X-ray photoelectron spectroscopy studies of oxides
-
Barr T.L. Recent advances in X-ray photoelectron spectroscopy studies of oxides. J. Vac. Sci. Technol. A 9 3 (1991) 1793-1805
-
(1991)
J. Vac. Sci. Technol. A
, vol.9
, Issue.3
, pp. 1793-1805
-
-
Barr, T.L.1
-
3
-
-
0036495690
-
X-ray absorption and photoemission electron spectroscopic investigation of crystalline and amorphous barium silicates
-
Bender S., Franke R., Hartmann E., Lansmann V., Jansen M., and Hormes J. X-ray absorption and photoemission electron spectroscopic investigation of crystalline and amorphous barium silicates. J. Non-Cryst. Solids 298 (2002) 99-108
-
(2002)
J. Non-Cryst. Solids
, vol.298
, pp. 99-108
-
-
Bender, S.1
Franke, R.2
Hartmann, E.3
Lansmann, V.4
Jansen, M.5
Hormes, J.6
-
4
-
-
33646581742
-
Interfacial reaction during MOCVD growth revealed by in situ ARXPS
-
Brevet A., Chassagnon R., Imhoff L., Marco de Lucas M.C., Domenichini B., and Bourgeois S. Interfacial reaction during MOCVD growth revealed by in situ ARXPS. Surf. Interface Anal. 38 (2006) 579
-
(2006)
Surf. Interface Anal.
, vol.38
, pp. 579
-
-
Brevet, A.1
Chassagnon, R.2
Imhoff, L.3
Marco de Lucas, M.C.4
Domenichini, B.5
Bourgeois, S.6
-
6
-
-
0021585826
-
Angle-resolved X-ray photoelectron spectroscopy
-
Fadley C.S. Angle-resolved X-ray photoelectron spectroscopy. Prog. Surf. Sci. 16 (1984) 275
-
(1984)
Prog. Surf. Sci.
, vol.16
, pp. 275
-
-
Fadley, C.S.1
-
7
-
-
0037100765
-
Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films
-
Kato H., Nango T., Miyagawa T., Katagiri T., Seol K.S., and Ohki Y. Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films. J. Appl. Phys. 92 2 (2002) 1106-1111
-
(2002)
J. Appl. Phys.
, vol.92
, Issue.2
, pp. 1106-1111
-
-
Kato, H.1
Nango, T.2
Miyagawa, T.3
Katagiri, T.4
Seol, K.S.5
Ohki, Y.6
-
9
-
-
52049117213
-
-
Lide D.R., 2006-2007. CRC Handbook of Chemistry and Physics, 87th ed.
-
Lide D.R., 2006-2007. CRC Handbook of Chemistry and Physics, 87th ed.
-
-
-
-
10
-
-
24644458329
-
Praseodymium silicate layers with atomically abrupt interface on Si(1 0 0)
-
Lupina G., Schroeder T., Dabrowski J., Wenger Ch., Mane A., Lippert G., Müssig H.-J., Hoffmann P., and Schmeisser D. Praseodymium silicate layers with atomically abrupt interface on Si(1 0 0). Appl. Phys. Lett. 87 (2005) 092901
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 092901
-
-
Lupina, G.1
Schroeder, T.2
Dabrowski, J.3
Wenger, Ch.4
Mane, A.5
Lippert, G.6
Müssig, H.-J.7
Hoffmann, P.8
Schmeisser, D.9
-
11
-
-
84914941098
-
X-ray photoemission study of the Ba/Si(1 0 0) interface and the oxidation of Si promoted by Ba overlayers.
-
Mesarwi A., and Ignatiev A. X-ray photoemission study of the Ba/Si(1 0 0) interface and the oxidation of Si promoted by Ba overlayers. J. Vac. Sci. Technol. A 9 4 (1991) 2264-2268
-
(1991)
J. Vac. Sci. Technol. A
, vol.9
, Issue.4
, pp. 2264-2268
-
-
Mesarwi, A.1
Ignatiev, A.2
-
12
-
-
33748797936
-
3/NiAl(1 0 0) ultrathin films. Part I: anaerobic deposition conditions
-
3/NiAl(1 0 0) ultrathin films. Part I: anaerobic deposition conditions. J. Phys. Chem. B 110 (2006) 17001-17008
-
(2006)
J. Phys. Chem. B
, vol.110
, pp. 17001-17008
-
-
Ozensoy, E.1
Peden, C.H.F.2
Szanyi, J.3
-
13
-
-
0037186032
-
2 for MOS gate dielectric
-
2 for MOS gate dielectric. Appl. Surf. Sci. 187 (2002) 297-304
-
(2002)
Appl. Surf. Sci.
, vol.187
, pp. 297-304
-
-
Paily, R.1
DasGupta, A.2
DasGupta, N.3
Bhattacharya, P.4
Misra, P.5
Ganguli, T.6
Kukreja, L.M.7
Balamurugan, A.K.8
Rajagopalan, S.9
Tyagi, A.K.10
-
14
-
-
79956030126
-
2 interface chemistry studied by synchrotron radiation X-ray photoelectron spectroscopy
-
2 interface chemistry studied by synchrotron radiation X-ray photoelectron spectroscopy. Appl. Phys. Lett. 81 19 (2002) 3627-3629
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.19
, pp. 3627-3629
-
-
Renault, O.1
Samour, D.2
Damlencourt, J.-F.3
Blin, D.4
Martin, F.5
Marthon, S.6
Barrett, N.T.7
Besson, P.8
-
16
-
-
52049100174
-
-
Stoneham A.M., Dhote J., 2002. A compilation of crystal data for halides and oxides. Online: http://www.oxmat.co.uk/Crysdata/homepage.htm.
-
Stoneham A.M., Dhote J., 2002. A compilation of crystal data for halides and oxides. Online: http://www.oxmat.co.uk/Crysdata/homepage.htm.
-
-
-
-
17
-
-
52049114726
-
Photoelectron binding energy shifts observed during oxidation of group IIA, IIIA and IVA elemental surfaces
-
Van der Heide P.A.W. Photoelectron binding energy shifts observed during oxidation of group IIA, IIIA and IVA elemental surfaces. J. Electron Spectrosc. Relat. Phenom. 100 (1999) 215
-
(1999)
J. Electron Spectrosc. Relat. Phenom.
, vol.100
, pp. 215
-
-
Van der Heide, P.A.W.1
-
19
-
-
0035872897
-
High-k gate dielectrics: current status and materials properties considerations
-
Wilk G.D., Wallace R.M., and Anthony J.M. High-k gate dielectrics: current status and materials properties considerations. J. Appl. Phys. 89 10 (2001) 5243-5275
-
(2001)
J. Appl. Phys.
, vol.89
, Issue.10
, pp. 5243-5275
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
20
-
-
0346534582
-
Hafnium and zirconium silicates for advanced gate dielectrics
-
Wilk G.D., Wallace R.M., and Anthony J.M. Hafnium and zirconium silicates for advanced gate dielectrics. J. Appl. Phys. 87 1 (2000) 484-492
-
(2000)
J. Appl. Phys.
, vol.87
, Issue.1
, pp. 484-492
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
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