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Volumn 39, Issue 8, 2008, Pages 1145-1148

Elaboration and characterization of barium silicate thin films

Author keywords

Barium silicate; In situ analyses; XPS

Indexed keywords

ANNEALING; BARIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MASS SPECTROMETRY; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NONMETALS; PHOTOELECTRON SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICATES; SILICON COMPOUNDS; SPECTRUM ANALYSIS; THICK FILMS;

EID: 52049093447     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2008.05.010     Document Type: Article
Times cited : (11)

References (21)
  • 2
    • 84927688800 scopus 로고
    • Recent advances in X-ray photoelectron spectroscopy studies of oxides
    • Barr T.L. Recent advances in X-ray photoelectron spectroscopy studies of oxides. J. Vac. Sci. Technol. A 9 3 (1991) 1793-1805
    • (1991) J. Vac. Sci. Technol. A , vol.9 , Issue.3 , pp. 1793-1805
    • Barr, T.L.1
  • 3
    • 0036495690 scopus 로고    scopus 로고
    • X-ray absorption and photoemission electron spectroscopic investigation of crystalline and amorphous barium silicates
    • Bender S., Franke R., Hartmann E., Lansmann V., Jansen M., and Hormes J. X-ray absorption and photoemission electron spectroscopic investigation of crystalline and amorphous barium silicates. J. Non-Cryst. Solids 298 (2002) 99-108
    • (2002) J. Non-Cryst. Solids , vol.298 , pp. 99-108
    • Bender, S.1    Franke, R.2    Hartmann, E.3    Lansmann, V.4    Jansen, M.5    Hormes, J.6
  • 6
    • 0021585826 scopus 로고
    • Angle-resolved X-ray photoelectron spectroscopy
    • Fadley C.S. Angle-resolved X-ray photoelectron spectroscopy. Prog. Surf. Sci. 16 (1984) 275
    • (1984) Prog. Surf. Sci. , vol.16 , pp. 275
    • Fadley, C.S.1
  • 7
    • 0037100765 scopus 로고    scopus 로고
    • Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films
    • Kato H., Nango T., Miyagawa T., Katagiri T., Seol K.S., and Ohki Y. Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films. J. Appl. Phys. 92 2 (2002) 1106-1111
    • (2002) J. Appl. Phys. , vol.92 , Issue.2 , pp. 1106-1111
    • Kato, H.1    Nango, T.2    Miyagawa, T.3    Katagiri, T.4    Seol, K.S.5    Ohki, Y.6
  • 9
    • 52049117213 scopus 로고    scopus 로고
    • Lide D.R., 2006-2007. CRC Handbook of Chemistry and Physics, 87th ed.
    • Lide D.R., 2006-2007. CRC Handbook of Chemistry and Physics, 87th ed.
  • 11
    • 84914941098 scopus 로고
    • X-ray photoemission study of the Ba/Si(1 0 0) interface and the oxidation of Si promoted by Ba overlayers.
    • Mesarwi A., and Ignatiev A. X-ray photoemission study of the Ba/Si(1 0 0) interface and the oxidation of Si promoted by Ba overlayers. J. Vac. Sci. Technol. A 9 4 (1991) 2264-2268
    • (1991) J. Vac. Sci. Technol. A , vol.9 , Issue.4 , pp. 2264-2268
    • Mesarwi, A.1    Ignatiev, A.2
  • 12
    • 33748797936 scopus 로고    scopus 로고
    • 3/NiAl(1 0 0) ultrathin films. Part I: anaerobic deposition conditions
    • 3/NiAl(1 0 0) ultrathin films. Part I: anaerobic deposition conditions. J. Phys. Chem. B 110 (2006) 17001-17008
    • (2006) J. Phys. Chem. B , vol.110 , pp. 17001-17008
    • Ozensoy, E.1    Peden, C.H.F.2    Szanyi, J.3
  • 16
    • 52049100174 scopus 로고    scopus 로고
    • Stoneham A.M., Dhote J., 2002. A compilation of crystal data for halides and oxides. Online: http://www.oxmat.co.uk/Crysdata/homepage.htm.
    • Stoneham A.M., Dhote J., 2002. A compilation of crystal data for halides and oxides. Online: http://www.oxmat.co.uk/Crysdata/homepage.htm.
  • 17
    • 52049114726 scopus 로고    scopus 로고
    • Photoelectron binding energy shifts observed during oxidation of group IIA, IIIA and IVA elemental surfaces
    • Van der Heide P.A.W. Photoelectron binding energy shifts observed during oxidation of group IIA, IIIA and IVA elemental surfaces. J. Electron Spectrosc. Relat. Phenom. 100 (1999) 215
    • (1999) J. Electron Spectrosc. Relat. Phenom. , vol.100 , pp. 215
    • Van der Heide, P.A.W.1
  • 19
    • 0035872897 scopus 로고    scopus 로고
    • High-k gate dielectrics: current status and materials properties considerations
    • Wilk G.D., Wallace R.M., and Anthony J.M. High-k gate dielectrics: current status and materials properties considerations. J. Appl. Phys. 89 10 (2001) 5243-5275
    • (2001) J. Appl. Phys. , vol.89 , Issue.10 , pp. 5243-5275
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 20
    • 0346534582 scopus 로고    scopus 로고
    • Hafnium and zirconium silicates for advanced gate dielectrics
    • Wilk G.D., Wallace R.M., and Anthony J.M. Hafnium and zirconium silicates for advanced gate dielectrics. J. Appl. Phys. 87 1 (2000) 484-492
    • (2000) J. Appl. Phys. , vol.87 , Issue.1 , pp. 484-492
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.