Interfacial reaction during MOCVD growth revealed by in situ ARXPS

Surface and Interface Analysis

Volumn 38, Issue 4, 2006, Pages 579-582

  Brevet, A ^a   Chassagnon, R ^a   Imhoff, L ^a   Marco De Lucas, M C ^a   Domenichini, B ^a   Bourgeois, S ^a  

^a LABORATOIRE INTERDISCIPLINAIRE CARNOT DE BOURGOGNE   (France)

Author keywords

ARXPS; Interface; MOCVD; Thickness measurement; Thin film; TiO2

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; THICKNESS MEASUREMENT; THIN FILMS; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; WETTING; X RAY PHOTOELECTRON SPECTROSCOPY;

ARXPS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); INTERFACE; SINGLE-LAYER MODELS;

SURFACE CHEMISTRY;

EID: 33646581742     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2293     Document Type: Conference Paper

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