Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms

IEEE Transactions on Electron Devices

Volumn 50, Issue 1, 2003, Pages 209-214

  Zogg, Hans ^a   Alchalabi, Karim ^a   Zimin, Dmitri ^a   Kellermann, Klaus ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Dislocations; Electronic properties; Epitaxial growth; Infrared detectors; Infrared imaging; Lead chalcogenides; Noise mechanisms

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ELECTRONIC PROPERTIES; INFRARED DETECTORS; INFRARED IMAGING; INTEGRATED CIRCUIT LAYOUT; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; READOUT SYSTEMS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

DIFFERENTIAL RESISTANCE; INFRARED SENSOR ARRAYS; MONOLITHIC LEAD CHALCOGENIDE; SILICON READOUT CHIPS;

IMAGE SENSORS;

EID: 0037251075     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.807257     Document Type: Article

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