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Volumn 39, Issue 8, 2003, Pages 659-661

High power mid-infrared optically pumped PbSe/PbSrSe multiple-quantum-well vertical-cavity surface-emitting laser operation at 325K

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH POWER LASERS; INFRARED RADIATION; LASER PULSES; LIGHT EMISSION; MIRRORS; OPTICAL PUMPING; SEMICONDUCTING LEAD COMPOUNDS; THERMAL EFFECTS;

EID: 0037666378     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030429     Document Type: Article
Times cited : (18)

References (10)
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  • 2
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    • EINDLAY, P.C., et al., 'Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation', Phys. Rev. B. 1998, 58. pp. 12908-12915
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  • 3
    • 0033169425 scopus 로고    scopus 로고
    • 60 C lead salt emission near 5 μm wavelength
    • SCHIEBI, U.P., and ROHR, J.: '60 C lead salt emission near 5 μm wavelength', Infrared Phys. Technol., 1999, 40, pp. 325-328
    • (1999) Infrared Phys. Technol. , vol.40 , pp. 325-328
    • Schiebi, U.P.1    Rohr, J.2
  • 4
    • 0033900114 scopus 로고    scopus 로고
    • Lead-salt vertical-cavity surface-emitting lasers operating at λ =4.5 4.6 μm with optical pumping
    • BEWLEY, W.W., et al.: 'Lead-salt vertical-cavity surface-emitting lasers operating at λ =4.5 4.6 μm with optical pumping', Electron. Lett., 2000. 36, pp. 539-540
    • (2000) Electron. Lett. , vol.36 , pp. 539-540
    • Bewley, W.W.1
  • 5
    • 0000397044 scopus 로고    scopus 로고
    • IV-VI compound mid-infrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular beam epitaxy
    • SHI, Z., et al.: 'IV-VI compound mid-infrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular beam epitaxy', Appl. Phys.. Lett., 2000. 76. pp. 3688-3690
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 3688-3690
    • Shi, Z.1
  • 6
    • 0035844478 scopus 로고    scopus 로고
    • Low-threshold optically pumped Z = 4.4 μm vertical-cavity surface-emitting laser with PbSe quantum-well active region
    • FELIX, C.L., et al.: 'Low-threshold optically pumped Z = 4.4 μm vertical-cavity surface-emitting laser with PbSe quantum-well active region', Appl. Phys. Lett., 2001, 78, pp. 3770-3772
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 3770-3772
    • Felix, C.L.1
  • 7
    • 18744423255 scopus 로고    scopus 로고
    • 6 μm vertical cavity surface emitting laser based on the IV VI semiconductor compounds
    • SCHARZI, T., et al.: 6 μm vertical cavity surface emitting laser based on the IV VI semiconductor compounds', Electron. Lett., 2000, 36, pp. 322324
    • (2000) Electron. Lett. , vol.36 , pp. 322-324
    • Scharzi, T.1
  • 8
    • 0000600845 scopus 로고    scopus 로고
    • Above room temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers
    • HEISS, W., et al., 'Above room temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers', Appl. Phys. Lett., 2001, 78, pp. 862-864
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  • 9
    • 0001360558 scopus 로고    scopus 로고
    • 4.8 μm vertical emitting PbTe quantum well lasers based on high-finesse EuTe/Pbl-xEuxTe micro-cavity
    • SPRINGHOLZ, G., et al.: 4.8 μm vertical emitting PbTe quantum well lasers based on high-finesse EuTe/Pbl-xEuxTe micro-cavity', Appl. Phys. Lett., 2000, 76, pp. 1807-1809
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 1807-1809
    • Springholz, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.