Effects of quench rates on the short- and medium-range orders of amorphous silicon carbide: A molecular-dynamics study

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Xue, Kun ^a   Niu, Li Sha ^a   Shi, Hui Ji ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

NONMETALS; SILICON; SILICON CARBIDE;

AMORPHOUS SILICON CARBIDE;

AMORPHOUS SILICON;

EID: 51849137376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2974095     Document Type: Article

References (30)

1. Y. M. Lei, Y. H. Yu, L. L. Cheng, B. Sundaraval, E. Z. Luo, C. X. Ren, S. C. Zou, S. P. Wong, D. H. Cheng, and I. H. Wilson, J. Appl. Phys. 0021-8979 10.1063/1.1286467 88, 3053 (2000).
2. H. Colder, R. Rizk, M. Morales, P. Marie, and J. Vicens, J. Appl. Phys. 0021-8979 10.1063/1.1985975 98, 024313 (2005).
3. D. Emin, T. L. Aselage, and C. Wood, Novel Refractory Semiconductors: Symposium, Anaheim, California, 21-23 April 1987 (Materials Research Society, Pittsburgh, PA, 1987).
4. J. Tersoff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49.16349 49, 16349 (1994).
5. V. Heera, H. Reuther, J. Stoemenos, and B. Ṕcz, J. Appl. Phys. 0021-8979 10.1063/1.371829 87, 78 (2000).
6. T. Takeshita, Y. Kurata, and S. Hasegawa, J. Appl. Phys. 0021-8979 10.1063/1.350561 71, 5395 (1992).
7. M. Ishimaru, I. -T. Bae, Y. Hirotsu, S. Matsumura, and K. E. Sickafus, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.024116 72, 024116 (2005).
8. M. Ishimaru, I. -T. Bae, A. Hirata, Y. Hirotsu, J. A. Valdez, and K. E. Sickafus, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/j.nimb.2005.08. 066 242, 473 (2006).
9. M. Ishimaru, I. -T. Bae, Y. Hirotsu, S. Matsumura, and K. E. Sickafus, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.89.055502 89, 055502 (2002).
10. J. Li, J. Appl. Phys. 0021-8979 10.1063/1.1690093 95, 6466 (2004).
11. F. Finocchi, G. Galli, M. Parrinello, and C. M. Bertoni, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.68.3044 68, 3044 (1992).
12. P. C. Kelires, Phys. Rev. B 0163-1829 10.1103/PhysRevB.46.10048 46, 10048 (1992).
13. V. I. Ivashchenko, P. E. A. Turchi, V. I. Shevchenko, L. A. Ivashchenko, and G. V. Rusakov, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.195201 66, 195201 (2002).
14. X. Yuan and L. W. Hobbs, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/S0168-583X(02)00516-5, 191, 74 (2002).
15. J. P. Rino, I. Ebbsjö, P. S. Branicio, R. K. Kalia, A. Nakano, F. Shimojo, and P. Vashishta, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.045207 70, 045207 (2004).
16. D. Mura, L. Colombo, R. Bertoncini, and G. Mula, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.10357 58, 10357 (1998).
17. R. Devanathan, F. Gao, and W. J. Weber, Nucl. Instrum. Methods Phys. Res. B 255, 130 (2007).
18. C. R. S. da Silva, J. F. Justo, and A. Fazzio, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65.104108 65, 104108 (2002).
19. R. Devanathan, F. Gao, and W. J. Weber, Appl. Phys. Lett. 0003-6951 10.1063/1.1739515 84, 3909 (2004).
20. F. Gao and W. J. Weber, Phys. Rev. B 0163-1829 10.1103/PhysRevB.63.054101 63, 054101 (2000).
21. F. Gao and W. J. Weber, J. Appl. Phys. 0021-8979 10.1063/1.1355717 89, 4275 (2001).
22. V. I. Ivashchenko, P. E. A. Turchi, V. I. Shevchenko, and O. A. Shramko, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.115201 70, 115201 (2004).
23. K. Mui and F. W. Smith, Phys. Rev. B 0163-1829 10.1103/PhysRevB.35.8080 35, 8080 (1987).
24. M. Tang and S. Yip, Phys. Rev. B 0163-1829 10.1103/PhysRevB.52.15150 52, 15150 (1995).
25. J. Tersoff, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.64.1757 64, 1757 (1990).
26. A. Sproul, D. R. Mckenzie, and D. J. H. Cockayne, Philos. Mag. B 1364-2812 10.1080/13642818608239007 54, 113 (1986).
27. D. S. Franzblau, Phys. Rev. B 0163-1829 10.1103/PhysRevB.44.4925 44, 4925 (1991).
28. P. M. Ossi, Disordered Materials (Springer, Germany, 2003).
29. P. Rocabois, C. Chatilllon, and C. Bernard, High Temp.-High Press. 3, 27/28 (1995/1996).
30. S. J. Clark, J. Crain, and G. J. Ackland, Phys. Rev. B 0163-1829 10.1103/PhysRevB.55.14059 55, 14059 (1997).