Transformation strain by chemical disordering in silicon carbide

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6466-6469

  Li, Ju ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DISORDERING; DENSITY FUNCTIONAL THEORY (DFT); ELECTRONIC RELAXATION; VOLUME EXPANSION;

AMORPHIZATION; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTALS; ELECTRON IRRADIATION; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; PROBABILITY DISTRIBUTIONS; SHEAR STRESS; STRESS RELAXATION; SWELLING;

SILICON CARBIDE;

EID: 2942668304     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690093     Document Type: Article

References (30)

1. L.L. Snead, S.J. Zinkle, J.C. Hay, and M.C. Osbome, Nucl Instrum. Methods Phys. Res. B 141, 123 (1998).
2. C. Serre et al., J. Appl. Phys. 79, 6907 (1996).
3. T.T. Zorba et al., Appl. Surf. Sci. 102, 120 (1996).
4. R. Devanathan, W.J. Weber, and T. Diaz de la Rubia, Nucl. Instrum. Methods Phys. Res. B 141, 118 (1998).
5. F. Gao and W.J. Weber, Phys. Rev. B 66, 024106 (2002).
6. C. Massobrio, V. Pontikis, and G. Martin, Phys. Rev. Lett. 62, 1142 (1989).
7. C. Massobrio, V. Pontikis, and G. Martin, Phys. Rev. B 41, 10486 (1990).
8. C. Massobrio and V. Pontikis, Phys. Rev. B 45, 2484 (1992).
9. V. Rosato and C. Massobrio, J. Alloys Compd. 194, 439 (1993).
10. M. Tang and S. Yip, Phys. Rev. Lett. 75, 2738 (1995).
11. P.R. Okamoto, N.Q. Lam, and L.E. Rehn, Solid State Phys. 52, 1 (1999).
12. X. Yuan and L.W. Hobbs, Nucl. Instrum. Methods Phys. Res. B 191, 74 (2002).
13. J.D. Eshelby, Proc. R. Soc. London, Ser. A 241, 376 (1957).
14. VIENNA AB-INITIO SIMULATION PACKAGE: G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); G. Kresse and J. Furthmüller, ibid. 54, 11169 (1996).
15. VIENNA AB-INITIO SIMULATION PACKAGE: G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993); G. Kresse and J. Furthmüller, ibid. 54, 11169 (1996).
16. D. Ceperley and B.J. Alder, Phys. Rev. Lett. 45, 566 (1980).
17. J.P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
18. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
19. H.J. Monkhorst and J.D. Pack, Phys. Rev. B 13, 5188 (1976).
20. M. Methfessel and A.T. Paxton, Phys. Rev. B 40, 3616 (1989).
21. http://alum.mit.edu/www/liju99/Papers/04/SiC/
22. C.H. Park, B.-H. Cheong, K.-H. Lee, and K.J. Chang, Phys. Rev. B 49, 4485 (1994).
23. F. Aryasetiawan and O. Gunnarsson, Rep. Prog. Phys. 61, 237 (1998).
24. J. H. Rose, J. R. Smith, and J. Ferrante, Phys. Rev. B 28, 1835 (1983).
25. P.C. Kelires and P.J.H. Denteneer, Solid State Commun. 87, 851 (1993).
26. V.I. Ivashchenko, P.E.A. Turchi, V.I. Shevchenko, L.A. Ivashchenko, and G.V. Rusakov, Phys. Rev. B 66, 195201 (2002).
27. I. Ivashehenko, V.I. Shevchenko, G.V. Rusakov, A.S. Klymenko, V.M. Popov, L.A. Ivashehenko, and E.I. Bogdanov, J. Phys.: Condens. Matter 14, 1799 (2002).
28. F. Finocchi, G. Galli, M. Parrinello, and C.M. Bertoni, Phys. Rev, Lett. 68, 3044 (1992).
29. L.J. Porter, J. Li, and S. Yip, J. Nucl. Mater, 246, 53 (1997).
30. J. Li, L.J. Porter, and S. Yip, J. Nucl. Mater. 255, 139 (1998).