Advanced ring type contact technology for high density phase change memory

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 513-516

  Song, Y J ^a   Park, J H ^a   Lee, S Y ^a   Park, Jae Hyun ^a   Hwang, Y N ^a   Lee, S H ^a   Ryoo, K C ^a   Ahn, S J ^a   Jeong, C W ^a   Shin, J M ^a   Jeong, W C ^a   Koh, K H ^a   Jeong, G T ^a   Jeong, H S ^a   Kim, K N ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; PHASE CHANGING CIRCUITS; RANDOM ACCESS STORAGE; THIN FILMS; TITANIUM NITRIDE;

BOTTOM ELECTRODE CONTACT (BEC); CONTACT HOLE; CORE DIELECTRICS; PHASE CHANGE MEMORY;

NONVOLATILE STORAGE;

EID: 33751417319     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546697     Document Type: Conference Paper

References (2)

1. M. Gill et al., Ovonic Unified Memory-A high-performance nonvolatile memory technology for stand alone memory and embedded applications, Proceedings of ISSC, 2002
2. Y.N. Hwang et al., Writing Current Reduction for High-density Phase-change RAM, Proceedings of IEDM, 2003.