A packaged MEMS-based 5-bit X -band high-pass/low-pass phase shifter

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 9, 2008, Pages 2025-2031

  Morton, Matthew A ^a,b   Papapolymerou, John ^a,b  

^a IEEE

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

MEMS phase shifters; Microelectromechanical systems (MEMS); Monolithic microwave integrated circuit (MMIC) phase shifters; Phase shifters; Phased arrays

Indexed keywords

COMPOSITE MICROMECHANICS; ELECTRIC NETWORK TOPOLOGY; ELECTROMECHANICAL DEVICES; MEMS; MICROELECTROMECHANICAL DEVICES; PHOTORESISTS; SILICON;

MEMS PHASE SHIFTERS; MICROELECTROMECHANICAL SYSTEMS (MEMS); MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) PHASE SHIFTERS; PHASED ARRAYS;

PHASE SHIFTERS;

EID: 51649118249     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.2001959     Document Type: Article

References (34)

1. R. V. Garver, "Broad-band diode phase shifters," IEEE Trans. Microw. Theory Tech., vol. MTT-20, no. 5, pp. 314-323, May 1972.
2. F. E. van Vliet and A. de Boer, "Fully-integrated core chip for X-band phased-array T/R modules," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2004, vol. 3, pp. 1753-1756.
3. G. Clark et al., "X- and K u-band T/R, TTD and PA MMICs," in Proc. GOMACTech'05, Apr. 2005, pp. 131-133.
4. J. Comeau, M. Morton, J. D. Cressler, J. Papapolymerou, and M. Mitchell, "A high-linearity 5-bit, X-band SiGe HBT phase shifter," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2006, pp. 1668-1671.
5. R. Tayrani et al., "Broad-band SiGe MMICs for phased-array radar applications," IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1462-1470, Sep. 2003.
6. A. Khalil, M. Mahfoudi, F. Traut, M. Shifrin, and J. Chavez, "A X-band 4-bit mHEMT phase shifter," in IEEE CSIC Dig., 2005, pp. 53-56.
7. D. Peroulis, S. P. Pacheco, and L. P. B. Katehi, "RF MEMS switches with enhanced power-handling capabilities," IEEE Microw. Theory Tech., vol. 52, no. 1, pp. 59-68, Jan. 2004.
8. N. McGruer, P. Zavracky, R. Morrison, S. Majumder, D. Potter and M. Schirmer, "RF and current handling performance of electro-statically actuated microswitches," presented at the Sens. Expo., 1999.
9. G. Wang, "RF MEMS switches with enhanced power-handling capabilities," Ph.D. dissertation, Dept. Elect. Comput. Eng., Georgia Ins. Technol., Atlanta, GA, 2006.
10. P. Blondy, C. Palego, A. Pothier, A. Crunteanu, T. Gasseling, C. Champeaux, A. Catherinot, and P. Tristant, "High power applications of RF-MEMS," in Silicon Monolithic Integr. Circuits RF Syst. Topical Meeting, Jan. 2007, pp. 166-168.
11. A. Ziaei, T. Dean, and Y. Mancuso, "Lifetime characterization of capacitive power RF MEMS switches," in Gallium Arsenide Other Semiconduct. Applicat Symp., Oct. 2005, pp. 509-512.
12. B. Lakshminarayanan and T. M. Weller, "Design and modeling of 4-bit slow-wave MEMS phase shifters," IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 120-127, Jan. 2006.
13. G. McFeetors and M. Okoniewski, "Distributed MEMS analog phase shifter with enhanced tuning," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 1, pp. 34-36, Jan. 2006.
14. G. L. Tan, R. E. Mihailovich, J. B. Hacke, J. E. DeNatale, and G. M. Rebeiz, "A 4-bit miniature X-band MEMS phase shifter using switched-LC networks," IEEE MTT-S Int. Microw. Symp. Dig., pp. 1477-1480, Jun. 2003.
15. G. L. Tan, R. E. Mihailovich, J. B. Hacker, J. F. DeNatale, and G. M. Rebeiz, "Low-loss 2- and 4-bit TTD MEMS phase shifters based on SP4T switches," IEEE Trans. Microw. Theory Tech., vol. 51, no. 1, pp. 297-304, Jan. 2003.
16. C. D. Nordquist, C. W. Dyck, G. M. Kraus, I. C. Reines, C. L. Goldsmith, W. D. Cowan, T. A. Plut, F. Austin, IV, P. S. Finnegan, M. H. Ballance, and C. T. Sullivan, "A DC to 10-GHz 6-b RF MEMS time delay circuit," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 5, pp. 305-307, May 2006.
17. 3 varactors," in IEEEMTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 667-670.
18. M. Morton, M. J. Andrews, J. Lee, J. Papapolymerou, J. D. Cressler, D. Cho, K. Hong, H. Shin, K. Park, and S. Yi, "On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes," in Silicon Monolithic Integrated Circuits RF Syst. Dig., Sep. 2004, pp. 53-56.
19. Y. Cheng, L. Lin, and K. Najafi, "A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding," J. Microelectromech. Syst., vol. 10, no. 3, pp. 392-399, Sep. 2001.
20. H. A. C. Tilmans et al., "Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab," in Int. Electron. Devices Meeting Tech. Dig., Dec. 200.1, pp. 41.4.1-1.4.4.
21. J. P. Becker and L. P. Katehi, "Multilevel finite ground coplanar line transitions for high-density using silicon micromachinging," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2000, pp. 303-306.
22. A. Margomenos, D. Peroulis, J. P. Becker, and L. P. Katehi, "Silicon micromachined interconnects for on-wafer packaging of MEMS devices," Silicon Monolithic Integr. Circuits RF Syst., pp. 33-36, Sep. 2001.
23. M. Morton, G. Wang, and J. Papapolymerou, "Wafer-scale packaging of RF MEMS for 50-90 GHz," Silicon Monolithic Integr: Circuits RF Syst., pp. 18-20, Jan. 2006.
24. A. Margomenos and L. P. B. Katehi, "Fabrication and accelerated hermeticky testing of an on-wafer package for RF MEMS," IEEE Trans. Microw. Theory Tech., vol. 52, no. 6, pp. 1626-1636, Jun. 2004.
25. Q. Y. Tong and K. Gsele, Semiconductor Wafer Bonding: Science and Technology. New York: Wiley, 1999.
26. M. A. Schmidt, "Wafer-to-wafer bonding for microstructure formation," Proc. IEEE, vol. 86, no. 8, pp. 1575-1585, Aug. 1998.
27. J. L. Jellison, "Effect of surface contamination on the thermocompression bondability of gold," IEEE Trans. Parts, Hybrids, Packag., vol. PHP-11, no. 3, pp. 206-211, Sep. 1975.
28. M. Morton, J. Comeau, J. Cressler, M. Mitchell, and J. Papapolymerou, "Sources of phase error and design considerations for the on-chip high-low pass phase shifter," IEEE Trans. Microw. Theory Tech., vol. 54, no. 12, pp. 4032-4040, Dec. 2006.
29. M. Morton, J. Comeau, J. Cressler, M. Mitchell, and J. Papapolymerou, "5-bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology," Proc. IET, Microw., Antennas, Propag., vol. 2, no. 1, pp. 19-22, Feb. 2008.
30. N. Kingsley and J. Papapolymerou, "Organic 'wafer-scale' packaged miniature 4-bit RF MEMS phase shifter" IEEE Trans. Microw. Theory Tech., vol. 54, no. 3, pp. 1229-1236, Mar. 2006.
31. A. Malczewski et al., "X-band RF MEMS phase shifters for phased array applications," IEEE Microw. Wireless Compon. Lett., vol. 9, no. 12, pp. 517-519, Dec. 1999.
32. J. S. Hayden et al., "Very low-loss distributed X-band and K a-band MEMS phase shifters using metal-air-metal capacitors," IEEE Trans. Microw. Theory Tech., vol. 51, no. 1, pp. 309-314, Jan. 2003.
33. C. Campbell and S. A. Brown, "A compact 5-bit phase-shifter MMIC for K-band satellite communication systems," IEEE Trans. Microw. Theory Tech., vol. 48, no. 12, pp. 2652-2656, Dec. 2000.
34. M/A-COM, Lowell, MA, "6-bit digital phase shifter 7.0-12.0 GHz," [Online]. Available: http://www.macom.com/DataSheets/MAPCGM0005-DIE. pdf Datasheet for MAPCGM0005-DIE. Available from: [Accessed 2/2/2008].