On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Volumn , Issue , 2004, Pages 53-56

  Morton, Matt ^a   Andrews, Joel ^a   Lee, Jongsoo ^a   Papapolymerou, John ^a   Cressler, John D ^a   Cho, Daehyung ^b   Hong, Kyushik ^a   Shin, Heonjong ^a   Park, Kangwook ^a   Yi, Sangdon ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LINES; ELECTROMAGNETIC WAVE PROPAGATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROSTRIP LINES; MICROWAVES; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; WAVEGUIDES;

EM SIMULATIONS; POLYMIDE DIELECTRICS; SILICON GERMANIUM (SIGE); THIN FILM MICROSTRIPS (TFM);

CMOS INTEGRATED CIRCUITS;

EID: 20344395595     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J.-S. Rieh et al., "SiGe HBTs with cut-off frequency of 350 GHz," Technical Digest of the IEEE International Electron Devices Meeting, pp. 771-774, Dec. 2002.
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5. J.F. Carpentier, S. Gellida, D. Gloria, G. Morin, and H. Jaouen, "Comparison between S-parameter measurements and 2D electromagnetic simulations for microstrip transmission lines on BiCMOS process," Proceedings of the IEEE Microelectronic Test Structures Conference, pp. 235-240, Mar. 2000.
6. S.P. Voinigescu, et al., "Process- and geometry-scalable bipolar transistor and transmission line models for Si and SiGe MMICs in the 5-22 GHz range," Technical Digest of the IEEE International Electron Devices Meeting, pp. 307-310, Dec. 1998.
7. R.B. Marks and D.F. Williams, "Program MultiCal, rev. 1.00," August 1995.