Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Wang, Runsheng ^a   Huang, Ru ^a   Zhang, Liangliang ^a   Liu, Hongwei ^a   Kim, Dong Won ^b   Park, Donggun ^b   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CONTACT RESISTANCE; ELECTRIC WIRE; EXPLOSIVES; IMPACT RESISTANCE; KETONES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SCATTERING; SILICON; TRANSISTORS;

CHANNEL BACKSCATTERING; GATE-ALL-AROUND; TOP DOWN APPROACHES;

MOSFET DEVICES;

EID: 51349163884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2977477     Document Type: Article

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