Epitaxial growth of 4H-SiC {0001} with large off-angles by chemical vapor deposition

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 223-226

  Saitoh, Hiroaki ^a   Manabe, Akira ^a   Kimoto, Tsunenobu ^b  

^a TOYOTA MOTOR CORPORATION   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

C face; CVD; Epitaxial growth; Off angle

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPILAYERS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; MORPHOLOGY;

DONOR CONCENTRATION; OFF-ANGLE; STEP BUNCHING;

SILICON CARBIDE;

EID: 37849003132     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.223     Document Type: Conference Paper

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