A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 141-144

  Numata, Keiichi ^a   Takahashi, Yuji ^a   Maeda, Tadashi ^a   Hida, Hikaru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; INSERTION LOSSES; RESISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL RECEIVERS; TRANSMITTERS; VOLTAGE CONTROL;

ANTENNA SWITCHES;

ELECTRIC SWITCHES;

EID: 0036309583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. High power heterojunction GaAs switch IC with P-1dB of more than 38dBm for GSM application
2. High power DPDT antenna switch MMIC for digital cellular systems
3. High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltage and a symmetrical pattern configuration
4. Monolithic FET structures for high-power control component applications
5. 3 V operation L-band power double-doped double heterojunction FETs
6. A GaAs high power RF single pole dual throw switch IC for digital mobile communication system