A 1.9 GHz SPDT switch implemented with GaN HFETs featuring two different depth-recesses in i-AIGaN

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 163-166

  Hirose, Mayumi ^a   Takada, Yoshiharu ^a   Kuraguchi, Masahiko ^a   Sasaki, Tadahiro ^a   Tsuda, Kunio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN HFET; Gate current; Off state capacitance; Ohmic contact resistance; SPDT switch

Indexed keywords

ALGAN; DIFFERENT DEPTH-RECESSES; GATE CURRENT; OFF-STATE CAPACITANCE; OHMIC CONTACT RESISTANCE;

BANDWIDTH; CAPACITANCE; ELECTRIC CURRENTS; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SWITCHING; WSI CIRCUITS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 21644465562     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392522     Document Type: Conference Paper

References (3)

1. A. Koudymov, X. Hu, K. Simin, G. Simin, M. Ali, J. Yang, M. A. Khan, "Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs", IEEE Electron Devices Letters, Vol. 23, No. 8, PP.449-451, 2002.
2. H. Ishida, Y. Hirose, T. Murata, A. Kanda, Y. Ikeda, T. Matsuno, K. Inoue, Y. Ueda, T. Tanaka, T. Egawa, and D. Ueda, "A High Power Tx/Rx Switch IC Using AlGaN/GaN HFETs," 2003 IEDM Technical Digests, pp.583-586, 2003.
3. M. Hirose and K. Tsuda, "Spontaneous and Piezoelectric Polarization Charge Effects on Contact Resistance in AlGaN/GaN Structures," 2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2002), pp.245-248, 2002.