A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1893-1899

  Ishida, Hidetoshi ^a   Hirose, Yutaka ^a   Murata, Tomohiro ^a   Ikeda, Yoshito ^a   Matsuno, Toshinobu ^a   Inoue, Kaoru ^a   Uemoto, Yasuhiro ^a   Tanaka, Tsuyoshi ^a   Egawa, Takashi ^b   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Field effect transistors (FETs); GaN; High power; Isolation; Loss; Sapphire; SiC; Switch

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; GALLIUM NITRIDE; INSERTION LOSSES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFETS); HIGH POWER SWITCH;

FIELD EFFECT TRANSISTORS;

EID: 23344447168     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.851835     Document Type: Article

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