-
1
-
-
0035686434
-
High-power broad-band AlGaN/GaN HEMT MMICs on SiC Substrates
-
December
-
B.M.Green, V.Tilak, S. Lee, H.Kim, J.A.Smart, K.J.Webb, J.R.Shealy, L.F.Eastman, "High-power broad-band AlGaN/GaN HEMT MMICs on SiC Substrates," IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 12, December 2001.
-
(2001)
IEEE Transactions on Microwave Theory and Techniques
, vol.49
, Issue.12
-
-
Green, B.M.1
Tilak, V.2
Lee, S.3
Kim, H.4
Smart, J.A.5
Webb, K.J.6
Shealy, J.R.7
Eastman, L.F.8
-
2
-
-
0034429090
-
A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier
-
December
-
J.J.Xu, S.Keller, G.Parish, S.Heikman, U.K. Mishra, R.A.York, "A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 12, December 2000.
-
(2000)
IEEE Transactions on Microwave Theory and Techniques
, vol.48
, Issue.12
-
-
Xu, J.J.1
Keller, S.2
Parish, G.3
Heikman, S.4
Mishra, U.K.5
York, R.A.6
-
4
-
-
0041779684
-
High power monolithic alGaN/GaN HEMT oscillator
-
September
-
V.Kaper, V.Tilak, H.Kim, A. Vertiatchikh, R.Thompson, T.Prunty, J.Smart, L.F.Eastman, J.R.Shealy, "High Power Monolithic AlGaN/GaN HEMT Oscillator," IEEE Journal of Solid-State Circuits, vol. 38, no.9, September 2003.
-
(2003)
IEEE Journal of Solid-state Circuits
, vol.38
, Issue.9
-
-
Kaper, V.1
Tilak, V.2
Kim, H.3
Vertiatchikh, A.4
Thompson, R.5
Prunty, T.6
Smart, J.7
Eastman, L.F.8
Shealy, J.R.9
-
5
-
-
0035381887
-
Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
-
June
-
J.B.Shealy, J.A.Smart, J.R.Shealy, "Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)," IEEE Microwave and Wireless Components Letters, vol. 11, no. 6, pp.244-245, June 2001.
-
(2001)
IEEE Microwave and Wireless Components Letters
, vol.11
, Issue.6
, pp. 244-245
-
-
Shealy, J.B.1
Smart, J.A.2
Shealy, J.R.3
-
7
-
-
0036210899
-
GaN-based high electron-mobility transistors for microwave and RF control applications
-
January
-
N.V.Drozdovski, R.H.Caverly, "GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications," IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 1, January 2002.
-
(2002)
IEEE Transactions on Microwave Theory and Techniques
, vol.50
, Issue.1
-
-
Drozdovski, N.V.1
Caverly, R.H.2
-
8
-
-
0036687061
-
Low-loss high power RF switching using multifinger alGaN/GaN Moshfets
-
August
-
A.Koudymov, X.Hu, K.Simin, G.Simin, M.Ali, J.Yang, M.A.Khan, "Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs," IEEE Electron Device Letters, vol. 23, no. 8, August 2002.
-
(2002)
IEEE Electron Device Letters
, vol.23
, Issue.8
-
-
Koudymov, A.1
Hu, X.2
Simin, K.3
Simin, G.4
Ali, M.5
Yang, J.6
Khan, M.A.7
-
9
-
-
0028015193
-
A GaAs high-power RF single-pole double throw switch IC for digital mobile communication systems
-
K.Miyatsuji, S.Nagata, N.Yoshikawa, K.Miyanga, Y.Ohishi, D.Ueda, "A GaAs high-power RF single-pole double throw switch IC for digital mobile communication systems," 1994 IEEE International Solid-State Circuit Conference, 1994.
-
(1994)
1994 IEEE International Solid-state Circuit Conference
-
-
Miyatsuji, K.1
Nagata, S.2
Yoshikawa, N.3
Miyanga, K.4
Ohishi, Y.5
Ueda, D.6
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