메뉴 건너뛰기




Volumn 2, Issue , 2004, Pages 1145-1148

Signal generation, control and frequency conversion AlGaN/GaN HEMT MMICs

Author keywords

AlGaN GaN HEMT; MMIC; Resistive FET mixer; Switch; VCO

Indexed keywords

ALGAN/GAN HEMT; FREQUENCY RANGE; POWER HANDLING; RESISTIVE FET MIXER;

EID: 4444249823     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (10)
  • 5
    • 0035381887 scopus 로고    scopus 로고
    • Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)
    • June
    • J.B.Shealy, J.A.Smart, J.R.Shealy, "Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)," IEEE Microwave and Wireless Components Letters, vol. 11, no. 6, pp.244-245, June 2001.
    • (2001) IEEE Microwave and Wireless Components Letters , vol.11 , Issue.6 , pp. 244-245
    • Shealy, J.B.1    Smart, J.A.2    Shealy, J.R.3
  • 7
    • 0036210899 scopus 로고    scopus 로고
    • GaN-based high electron-mobility transistors for microwave and RF control applications
    • January
    • N.V.Drozdovski, R.H.Caverly, "GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications," IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 1, January 2002.
    • (2002) IEEE Transactions on Microwave Theory and Techniques , vol.50 , Issue.1
    • Drozdovski, N.V.1    Caverly, R.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.