A novel high-voltage normally-off 4H-SiC vertical JFET

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1223-1226

  Zhao, J H ^a   Li, X ^a   Tone, K ^a   Alexandrov, P ^b   Pan, M ^b   Weiner, M ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

Numerical simulation and fabrication; Power devices; Vertical JFETs

Indexed keywords

HVDC POWER TRANSMISSION; JUNCTION GATE FIELD EFFECT TRANSISTORS; NUMERICAL MODELS; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; NUMERICAL ANALYSIS; SILICON CARBIDE; SWITCHING;

BLOCKING VOLTAGE; HIGH VOLTAGE; POWER DEVICES; PROCESSING TECHNOLOGIES; SPECIFIC-ON RESISTANCE; SWITCHING CHARACTERISTICS; TURN-ON TIME; TWO-DIMENSIONAL NUMERICAL SIMULATION; BLOCKING VOLTAGES;

SILICON CARBIDE; FIELD EFFECT TRANSISTORS;

EID: 0036433909     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1223     Document Type: Conference Paper

References (6)

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