Electronic properties of nanocrystalline layers of wide-band-gap materials

Chaos, solitons and fractals

Volumn 10, Issue 12, 1999, Pages 2099-2152

  Szmidt, Jan ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BORON COMPOUNDS; CRYSTAL STRUCTURE; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; NITRIDES; OPTICAL PROPERTIES; PHASE COMPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING DIAMONDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM NITRIDE; BORON NITRIDE; CARBON NITRIDE; GALLIUM NITRIDE; WIDE BAND GAP MATERIALS;

SEMICONDUCTING FILMS;

EID: 0032631004     PISSN: 09600779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-0779(98)00254-9     Document Type: Article

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