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Volumn 48, Issue 8-9, 2008, Pages 1193-1197

Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode

Author keywords

[No Author keywords available]

Indexed keywords

SULFATE MINERALS;

EID: 50349093048     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.006     Document Type: Article
Times cited : (3)

References (17)
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    • Electrical properties of high-k gate dielectrics: challenges, current issues, and possible solutions
    • Houssa M., Pantisano L., Ragnarsson L.A., Degraeve R., et al. Electrical properties of high-k gate dielectrics: challenges, current issues, and possible solutions. Mater Sci Eng R51 (2006) 37-85
    • (2006) Mater Sci Eng , vol.R51 , pp. 37-85
    • Houssa, M.1    Pantisano, L.2    Ragnarsson, L.A.3    Degraeve, R.4
  • 3
    • 0942266463 scopus 로고    scopus 로고
    • Reliability characteristics of high-k dielectrics
    • Kim Y.H., and Lee J.C. Reliability characteristics of high-k dielectrics. Microelectron Reliab 44 (2004) 183-193
    • (2004) Microelectron Reliab , vol.44 , pp. 183-193
    • Kim, Y.H.1    Lee, J.C.2
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    • 0000954294 scopus 로고    scopus 로고
    • Trap-assisted tunneling in high permittivity gate dielectric stacks
    • Houssa M., Tuominen M., Naili M., Afanas'ev V., et al. Trap-assisted tunneling in high permittivity gate dielectric stacks. J Appl Phys 87 (2000) 8615-8620
    • (2000) J Appl Phys , vol.87 , pp. 8615-8620
    • Houssa, M.1    Tuominen, M.2    Naili, M.3    Afanas'ev, V.4
  • 13
    • 0032019458 scopus 로고    scopus 로고
    • Thickness dependence of thin oxide wearout
    • Gladstone S.M., and Dumin D.J. Thickness dependence of thin oxide wearout. Solid-State Electron 42 (1998) 317-324
    • (1998) Solid-State Electron , vol.42 , pp. 317-324
    • Gladstone, S.M.1    Dumin, D.J.2
  • 16
    • 42649117753 scopus 로고    scopus 로고
    • On the characterization of electronically active defects in high-k gate dielectrics
    • Gusev E. (Ed), Springer
    • Buchanan D.A., and Felnhofer D. On the characterization of electronically active defects in high-k gate dielectrics. In: Gusev E. (Ed). Defects in high-k dielectric stacks vol. 220 (2006), Springer 41-60
    • (2006) Defects in high-k dielectric stacks , vol.220 , pp. 41-60
    • Buchanan, D.A.1    Felnhofer, D.2
  • 17
    • 33846621591 scopus 로고    scopus 로고
    • Stress induced leakage current mechanism in thin Hf-silicate layers
    • Paskaleva A., Lemberger M., and Bauer A.J. Stress induced leakage current mechanism in thin Hf-silicate layers. Appl Phys Lett 90 (2007) 042105
    • (2007) Appl Phys Lett , vol.90 , pp. 042105
    • Paskaleva, A.1    Lemberger, M.2    Bauer, A.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.