메뉴 건너뛰기




Volumn , Issue , 2007, Pages 19-29

Review on process-induced strain techniques for advanced logic technologies

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; NANOTECHNOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

EID: 47949091640     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2007.4383814     Document Type: Conference Paper
Times cited : (12)

References (14)
  • 1
    • 47949099452 scopus 로고    scopus 로고
    • Integration and optimization of embedded SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies
    • M. Horstmann et al., "Integration and optimization of embedded SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies", in Proc. IEDM 2005
    • (2005) Proc. IEDM
    • Horstmann, M.1
  • 2
    • 33947259838 scopus 로고    scopus 로고
    • High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography
    • S. Narasimha et al., "High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography", in Proc. IEDM 2006
    • (2006) Proc. IEDM
    • Narasimha, S.1
  • 3
    • 45849086584 scopus 로고    scopus 로고
    • Integration Challenges for Advanced Process-Strained CMOS on Biaxially-Strained SOI (SSOI) Substrates
    • A. Wei et al., "Integration Challenges for Advanced Process-Strained CMOS on Biaxially-Strained SOI (SSOI) Substrates", ECS Trans. 6, (1) 15 (2007)
    • (2007) ECS Trans , vol.6 , Issue.1 , pp. 15
    • Wei, A.1
  • 4
    • 40949162000 scopus 로고    scopus 로고
    • Multiple Stress Memorization in Advanced SOI CMOS Technologies
    • A. Wei et al., "Multiple Stress Memorization in Advanced SOI CMOS Technologies", in Proc. VLSI Symposium 2007
    • (2007) Proc. VLSI Symposium
    • Wei, A.1
  • 5
    • 47949108320 scopus 로고    scopus 로고
    • Enhanced performance in 50 nm n-MOSFETs with silicon-carbon source/drain regions
    • K. W. Ang et al., "Enhanced performance in 50 nm n-MOSFETs with silicon-carbon source/drain regions," in Proc. IEDM 2004
    • (2004) Proc. IEDM
    • Ang, K.W.1
  • 6
    • 28844456770 scopus 로고    scopus 로고
    • Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
    • H. S. Yang, et al., "Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing" in Proc. IEDM 2004
    • (2004) Proc. IEDM
    • Yang, H.S.1
  • 7
    • 33748503606 scopus 로고    scopus 로고
    • Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement
    • K.-J Chui et al., "Strained-SOI n-Channel Transistor With Silicon-Carbon Source/Drain Regions for Carrier Transport Enhancement", IEEE Electron Device Lett., Vol. 27, Issue 9, (2006)
    • (2006) IEEE Electron Device Lett , vol.27 , Issue.9
    • Chui, K.-J.1
  • 8
    • 47949085679 scopus 로고    scopus 로고
    • A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
    • T. Gahni, et al., "A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors", in Proc. IEDM 2003
    • (2003) Proc. IEDM
    • Gahni, T.1
  • 9
    • 33644770462 scopus 로고    scopus 로고
    • High Performance 65nm SOI Technology with Enhanced Transistor Strain and Advanced-Low-K BEOL
    • W-H. Lee et al., "High Performance 65nm SOI Technology with Enhanced Transistor Strain and Advanced-Low-K BEOL", in Proc. IEDM 2005
    • (2005) Proc. IEDM
    • Lee, W.-H.1
  • 10
    • 33845877965 scopus 로고    scopus 로고
    • Phenomenological model for 'stress memorization' effect from a capped-poly process
    • L. S. Adam, "Phenomenological model for 'stress memorization' effect from a capped-poly process", in Proc. SISPAD 2005
    • (2005) Proc. SISPAD
    • Adam, L.S.1
  • 11
    • 33644623479 scopus 로고    scopus 로고
    • Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths
    • D. V. Singh et al., "Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths", in Proc. IEDM 2005
    • (2005) Proc. IEDM
    • Singh, D.V.1
  • 12
    • 48349120893 scopus 로고    scopus 로고
    • Mechanical Stress in Silicon Based Materials: Evolution Upon Annealing and Impact on Devices Performances
    • P. Morin, "Mechanical Stress in Silicon Based Materials: Evolution Upon Annealing and Impact on Devices Performances", in Proc. RTP 2006
    • (2006) Proc. RTP
    • Morin, P.1
  • 13
    • 41149150847 scopus 로고    scopus 로고
    • Stress Memorization Technique (SMT) Optimization for 45 nm CMOS
    • C. Ortolland, "Stress Memorization Technique (SMT) Optimization for 45 nm CMOS", in Proc. VLSI Technology 2006
    • (2006) Proc. VLSI Technology
    • Ortolland, C.1
  • 14
    • 33745148648 scopus 로고    scopus 로고
    • Performance of supercritical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology
    • Thean, A.V.Y., "Performance of supercritical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology", in Proc. VLSI Technology 2005
    • (2005) Proc. VLSI Technology
    • Thean, A.V.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.