Characterization of nanoscale recording mark on Ge2Sb2Te5 film

Ultramicroscopy

Volumn 108, Issue 10, 2008, Pages 1246-1250

  Kim, JunHo ^a   Kwon, Myeung Hoi ^a   Song, Ki Bong ^b  

^a SolarLight Ltd   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Atomic force microscopy; Crystallization; Ge2Sb2Te5; I V spectroscopy; Nanoscale mark; Phase change

Indexed keywords

GERMANIUM; NANOSTRUCTURED MATERIALS; OPTICAL DESIGN;

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; GE2SB2TE5; I-V SPECTROSCOPY; NANO SCALING; NANOSCALE MARK; PHASE CHANGE; RECORDING MARKS;

NANOTECHNOLOGY;

ANTIMONY; GERMANIUM; GLASS; NANOWIRE; TELLURIUM;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; FILM; NANOANALYSIS; X RAY DIFFRACTION;

EID: 49949103060     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.04.080     Document Type: Article

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