SCOPUS 정보 검색 플랫폼

Journal of Nanoscience and Nanotechnology

Volumn 6, Issue 11, 2006, Pages 3474-3478

Simulation study on heat conduction of a nanoscale phase-change random access memory cell

(2) Kim, JunHo a Song, Ki Bong b

a SolarLight Ltd (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

Amorphization; Crystallization; FEM; PRAM

Indexed keywords

TEMPERATURE-DEPENDENCE; TERNARY CHALCOGENIDE ALLOY;

AMORPHIZATION; COMPUTER SIMULATION; CRYSTALLIZATION; FINITE ELEMENT METHOD; HEAT CONDUCTION; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS;

RANDOM ACCESS STORAGE;

ALLOY; NANOPARTICLE;

ARTICLE; CHEMISTRY; COMPUTER; COMPUTER PROGRAM; COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; FINITE ELEMENT ANALYSIS; METHODOLOGY; NANOTECHNOLOGY; TEMPERATURE; THERMAL CONDUCTIVITY; THERMODYNAMICS; TIME;

ALLOYS; COMPUTER SIMULATION; COMPUTERS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; FINITE ELEMENT ANALYSIS; NANOPARTICLES; NANOTECHNOLOGY; SOFTWARE; TEMPERATURE; THERMAL CONDUCTIVITY; THERMODYNAMICS; TIME FACTORS;

EID: 33845747317 PISSN: 15334880 EISSN: None Source Type: Journal
DOI: 10.1166/jnn.2006.037 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.