Theoretical study of highly strained InAs material from first-principles modelling: Application to an ideal QD

Journal of Physics D: Applied Physics

Volumn 41, Issue 16, 2008, Pages

  Pedesseau, L ^a   Even, J ^a   Bondi, A ^a   Guo, W ^a   Richard, S ^a   Folliot, H ^a   Labbe, C ^a   Cornet, C ^a   Dehaese, O ^a   Le Corre, A ^a   Durand, O ^a   Loualiche, S ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; CRYSTALS; DENSITY FUNCTIONAL THEORY; FLUID MECHANICS; GALLIUM ALLOYS; POWDERS; PROBABILITY DENSITY FUNCTION; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SOLID STATE PHYSICS; ZINC;

FIRST-PRINCIPLES; GAP SUBSTRATES; GRADUAL STRAIN; HIGHLY STRAINED; LATTICE MATCHING; LATTICE PARAMETERS; QUANTUM DOT; ROCK-SALT PHASE; STRAIN EFFECTS; ZINC-BLENDE;

INDIUM ARSENIDE;

EID: 49749151011     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/16/165505     Document Type: Article

References (57)

1. Antreasyan A, Chen C Y, Napholtz S G and Wilt D P 1985 J. Appl. Phys. 58 1686
2. Matsui Y and Kusumi Y 1996 J. Appl. Phys. 79 6982
3. Cornet C, Platz C, Caroff P, Even J, Labbé C, Folliot H, Le Corre A and Loualiche S 2005 Phys. Rev. B 72 035342
4. Ohno T 1988 Phys. Rev. B 38 13191
5. Continenza A, Massidda S and Freeman A J 1990 Phys. Rev. B 41 12013
6. Ke S H, Wang R Z and Huang M C 1995 J. Appl. Phys. 77 2556
7. Moll N, Scheffler M and Pehlke E 1998 Phys. Rev. B 58 4566
8. Bester G, Zunger A, Wu X and Vanderbilt D 2006 Phys. Rev. B 74 081305
9. Grundmann M, Stier O and Bimberg D 1995 Phys. Rev. B 52 11969
10. Pryor C 1998 Phys. Rev. B 57 7190
11. Pryor C 1999 Phys. Rev. B 60 2869
12. Mlinar V, Tadić M, Partoens B and Peeters F M 2005 Phys. Rev. B 71 205305
13. Cornet C et al 2006 Phys. Rev. B 74 035312
14. Even J, Doré F, Cornet C, Pedesseau L, Schliwa A and Bimberg D 2007 Appl. Phys. Lett. 91 122112
15. Shtinkov N, Desjardins P and Masut R A 2002 Phys. Rev. B 66 195303
16. Santoprete R, Belita Koiller, Capaz R B, Kratzer P, Liu Q K and Scheffler M 2003 Phys. Rev. B 68 235311
17. Lu J Q, Johnson H T, Dasika V D and Goldman R S 2006 Appl. Phys. Lett. 88 053109
18. Jaskólski W, Zieliński M, Bryant G W and Aizpurua J 2006 Phys. Rev. B 74 195339
19. Santoprete R, Kratzer P, Scheffler M, Capaz Rodrigo B and Belita Koiller 2007 J. Appl. Phys. 102 023711
20. Gonze X et al 2002 Comput. Mater. Sci. 25 478
21. Troullier N and Martins J L 1991 Phys. Rev. B 43 1993
22. Monkhorst H J and Pack J D 1976 Phys. Rev. B 13 5188
23. Burenkov Y A, Davydov S Y and Nikanorov S P 1975 Sov. Phys. Solid State 17 7
24. Wang S Q and Ye H Q 2003 Phys. Status. Solidi. B 240 45
25. Penev E 2002 On the theory of surface diffusion in InAs/GaAs(0 0 1) heteroepitaxy PhD Thesis TU Berlin http://edocs.tu-berlin.de/diss/2002/ penev_evgeni.pdf
26. Nelson D F and Turner E H 1968 J. Appl. Phys. 39 3337
27. Arlt G and Quadflieg P 1968 Phys. Status. Solidi. B 25 323
28. Bester G, Wu X, Vanderbilt D and Zunger A 2006 Phys. Rev. Lett. 96 187602
29. Mujica A and Needs R J 1997 Phys. Rev. 55 9659
30. Louail L, Maouche D and Hachemi A 2006 Mater. Lett. 60 3269
31. Deligoz E, Colakoglu K, Ciftci Y O and Ozisik H 2007 Comput. Mater. Sci. 39 533
32. Christensen N E 1986 Phys. Rev. 33 5096
33. Christensen N E 1998 High Pressure in Semiconductor Physics I ed T Suski and W Paul (New York: Academic)
34. Christensen N E 1998 Semiconductors and Semimetals vol 54 ed R K Willardson and E R Weber (New York: Academic)
35. Vohra Y K, Weir S T and Ruoff A L 1985 Phys. Rev. 31 7344
36. Grosse F and Zimmermann R 2007 Phys. Rev. B 75 235320
37. Ozolinsk J, Averkieva G, Ilvinsk A and Goryuna N 1963 Sov. Phys.-Crystallogr. 7 691
38. Gerlich D 1963 J. Appl. Phys. 34 2915
39. Vuxcevich M R 1972 Phys. Status. Solidi. B 54 219
40. Van Camp P E, Van Doren V E and Devreese J T 1990 Phys. Rev. B 41 1598
41. Murnaghan F D 1944 Proc. Natl Acad. Sci. USA 30 244
42. Zener C 1947 Phys. Rev. 71 12 846
43. Zhu X and Louie S G 1991 Phys. Rev. B 43 14142
44. Zanolli Z, Fuchs F, Furthmüller J, von Barth U and Bechstedt F 2007 Phys. Rev. 75 245121-8
45. Hybertsen M and Louie S G 1984 Phys. Rev. B 30 5777
46. Charache G W et al 1999 J. Appl. Phys. 86 452
47. Pikus G E and Bir G L 1959 Sov. Phys.-Solid State 1 136
48. Yu P Y and Cardona M 1996 Fundamentals of Semiconductors: Physics and Materials Properties (Berlin: Springer)
49. Chuang S L 1995 Physics of Optoelectronic Devices (Wiley Series in Pure and Applied Optics) ed J W Goodman (New York: Wiley)
50. Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
51. Leitsmann R, Ramos L E and Bechstedt G 2006 Phys. Rev. 74 085309-8
52. Heiss W et al 2007 J. Appl. Phys. 101 081723
53. Even J, Doré F, Cornet C and Pedesseau L 2008 Phys. Rev. B 77 085305
54. Van de Walle C G and Martin R 1986 Phys. Rev. B 34 5621
55. Van de Walle C G and Martin R 1987 Phys. Rev. B 35 8154
56. Baldereschi A, Baroni S and Resta R 1988 Phys. Rev. Lett. 61 734
57. Junquera J 2002 Macroave code included in ABINIT package