Moss-Burstein and plasma reflection characteristics of heavily doped n-type InxGa1-xAs and InPxAs1-y

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 452-458

  Charache, G W ^a   DePoy, D M ^a   Raynolds, J E ^a   Baldasaro, P F ^a   Miyano, K E ^b   Holden, T ^b   Pollak, F H ^b   Sharps, P R ^c   Timmons, M L ^c   Geller, C B ^d   Mannstadt, W ^e   Asahi, R ^e   Freeman, A J ^e   Wolf, W ^f  

^a LOCKHEED MARTIN   (United States)

^b CITY UNIVERSITY OF NEW YORK   (United States)

^c RTI INTERNATIONAL   (United States)

^d BETTIS ATOMIC POWER LABORATORY   (United States)

^e NORTHWESTERN UNIVERSITY   (United States)

^f Molecular Simulations Inc   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000315287     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370751     Document Type: Article

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