Effect of Ru addition on the properties of Al-doped ZnO thin films prepared by radio frequency magnetron sputtering on polyethylene terephthalate substrate

Journal of Alloys and Compounds

Volumn 464, Issue 1-2, 2008, Pages 89-94

  Hsi, Chi Shiung ^a   Houng, Boen ^b   Hou, Bing Yi ^b   Chen, Guo Ju ^b   Fu, Shen Li ^b  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

^b I SHOU UNIVERSITY   (Taiwan)

Author keywords

Carrier mobility; Magnetron sputtering; Transmittance; ZnO thin films

Indexed keywords

ALUMINA; ALUMINUM; CONCENTRATION (PROCESS); CONDUCTIVE FILMS; ELECTRIC PROPERTIES; LIGHT METALS; MAGNETRONS; OXIDE FILMS; OXIDES; POLYESTERS; RADIO WAVES; RUTHENIUM; SEMICONDUCTING ZINC COMPOUNDS; THERMOPLASTICS; THICK FILMS; THIN FILMS; ZINC; ZINC OXIDE;

AL-DOPED ZNO; ALUMINUM-DOPED ZINC OXIDE; CARRIER MOBILITY; CRYSTALLINITY; ELECTRICAL PROPERTIES; POLY ETHYLENE TEREPHTHALATE; RADIO-FREQUENCY MAGNETRON SPUTTERING; RU DOPING; TRANSMITTANCE; TRANSPARENT CONDUCTING; ZNO THIN FILMS;

MAGNETRON SPUTTERING;

EID: 49749094029     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.10.034     Document Type: Article

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