SCOPUS 정보 검색 플랫폼

Volumn 93, Issue 6, 2008, Pages

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

(6) Seo, Y J a Kim, K C a Kim, H D a Joo, M S b An, H M c Kim, T G a

a Korea University (South Korea)

b Hynix Semiconductor Inc (South Korea)

c Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; SILICON COMPOUNDS;

BLOCKING OXIDES;

CHARGE DISTRIBUTION;

EID: 49749092742 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2970990 Document Type: Article

Times cited : (23)

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