Conformal filling of silicon micropillar platform with 10boron

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1309-1314

  Deo, N ^a   Brewer, J R ^a   Reinhardt, C E ^b   Nikolic R J ^b   Cheung, C L ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON BUFFER GAS; BUFFER GAS; CONFORMAL FILLING; DECABORANE; DEPOSITION MECHANISM; FILL FACTORS; HIGH ASPECT RATIO; HIGH THERMAL; MICRO PILLARS; PILLAR STRUCTURE; PROCESS PARAMETERS; PROCESS PRESSURE; PROCESS TEMPERATURES; REACTION TEMPERATURES; STRUCTURE GEOMETRIES; THERMAL NEUTRONS;

AERODYNAMICS; ARGON; ASPECT RATIO; DEPOSITION RATES; FLOW OF GASES; FLOW RATE; FLUID MECHANICS; GAS DYNAMICS; INERT GASES; ISOTOPES; NEUTRON DETECTORS; NEUTRONS; NONMETALS; NUCLEAR REACTORS; PHOTORESISTS; PRESSURE DROP; RATE CONSTANTS; REACTION RATES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DETECTORS; SILICON;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

EID: 49749085595     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2939260     Document Type: Article

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