메뉴 건너뛰기




Volumn 53, Issue 1, 2008, Pages 351-356

Deposition and characterization of porous low-dielectric-constant SiOC(-H) thin films deposited from TES/O2 precursors by using plasma-enhanced chemical vapor deposition

Author keywords

FTIR; Low k materials; PECVD; SiOC( H) films; TES; XPS

Indexed keywords


EID: 49649091839     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.351     Document Type: Conference Paper
Times cited : (26)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.