Multiple-step electron charging in silicon-quantum-dot floating gate metal-oxide-semiconductor memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 B, 2003, Pages 4134-4137

  Ikeda, Mitsuhisa ^a   Shimizu, Yusuke ^a   Murakami, Hideki ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Coulomb blockade; Floating gate; MOS memory; Multiple step charging; Silicon quantum dot

Indexed keywords

DIGITAL STORAGE; ELECTRONS; GATES (TRANSISTOR); MOSFET DEVICES;

FLOATING GATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0042362124     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4134     Document Type: Conference Paper

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