Control of current hysteresis effects in a GaAs/n-AlGaAs quantum trap field effect transistor with embedded InAs quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 7100-7102

  Kim, Hoon ^a   Noda, Takeshi ^a   Kawazu, Takuya ^a   Sakaki, Hiroyuki ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Current hysteresis; F N tunneling; FET; InAs; MBE; Memory devices; Quantum dots

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; GATES (TRANSISTOR); HETEROJUNCTIONS; HYSTERESIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

CURRENT HYSTERESIS EFFECTS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0034430335     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.7100     Document Type: Article

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