Enhanced internal quantum efficiency and light extraction efficiency from textured GaNAlGaN quantum wells grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Cabalu, J S ^a   Thomidis, C ^a   Moustakas, T D ^a   Riyopoulos, S ^b   Zhou, Lin ^c   Smith, David J ^c  

^a Boston University   (United States)

^b SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAUSSIAN DISTRIBUTION; MULTIPLE QUANTUM WELLS (MQWS); SAPPHIRE SUBSTRATES; SUBSTRATE TEMPERATURE;

GALLIUM NITRIDE; LIGHT POLARIZATION; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 33645658562     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179120     Document Type: Article

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