SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 11, 2005, Pages

Characterization of AlGaNGaN p-n diodes with selectively regrown n -AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors

(3) Xing, H a,b Denbaars, S P b Mishra, U K b

a UNIVERSITY OF NOTRE DAME (United States)

b University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAINS; MEMORY EFFECTS; P-N DIODES; SECONDARY-ION-MASS SPECTROMETRY (SIMS);

BIPOLAR TRANSISTORS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; GAIN CONTROL; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 20544438805 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1914952 Document Type: Article

Times cited : (20)

References (15)

1
- 0000925636
- H. Xing, J. Phys.: Condens. Matter 13, 7139 (2001).
- (2001) J. Phys.: Condens. Matter , vol.13 , pp. 7139
- Xing, H.¹

2
- 0033171966
- S. Yoshida and J. Suzuki, Jpn. J. Appl. Phys., Part 2 38, L851 (1999).
- (1999) Jpn. J. Appl. Phys., Part 2 , vol.38 , pp. 851
- Yoshida, S.¹ Suzuki, J.²

3
- 0034425001
- H. Xing, L. McCarthy, S. Keller, S. P. DenBaars, and U. K. Mishra, Proceedings of the 27th International Symposium on Compound Semiconductors, Monterey, CA, October 2000 (IEEE, Piscataway, NJ), p. 365.
- (2000) Proceedings of the 27th International Symposium on Compound Semiconductors, Monterey, CA, October , pp. 365
- Xing, H.¹ McCarthy, L.² Keller, S.³ Denbaars, S.P.⁴ Mishra, U.K.⁵

4
- 0038614798
- H. Xing, P. Chavarkar, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 24, 141 (2003).
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 141
- Xing, H.¹ Chavarkar, P.² Keller, S.³ Denbaars, S.P.⁴ Mishra, U.K.⁵

5
- 12944273603
- J. J. Huang, IEEE Electron Device Lett. 36, 1239 (2000).
- (2000) IEEE Electron Device Lett. , vol.36 , pp. 1239
- Huang, J.J.¹

6
- 0042377575
- T. Makimoto, K. Kumakura, and N. Kobayashi, Appl. Phys. Lett. 83, 1035 (2003).
- (2003) Appl. Phys. Lett. , vol.83 , pp. 1035
- Makimoto, T.¹ Kumakura, K.² Kobayashi, N.³

7
- 0037633160
- H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, S. P. DenBaars, and U. K. Mishra, Jpn. J. Appl. Phys., Part 1 42, 50 (2003).
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 50
- Xing, H.¹ Green, D.S.² Yu, H.³ Mates, T.⁴ Kozodoy, P.⁵ Keller, S.⁶ Denbaars, S.P.⁷ Mishra, U.K.⁸

8
- 0001192011
- K. Kumakura, T. Makimoto, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 39, L337 (2000).
- (2000) Jpn. J. Appl. Phys., Part 2 , vol.39 , pp. 337
- Kumakura, K.¹ Makimoto, T.² Kobayashi, N.³

9
- 0032672027
- L. S. McCarthy, P. Kozodoy, M. J. W. Rodwell, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 20, 277 (1999).
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 277
- McCarthy, L.S.¹ Kozodoy, P.² Rodwell, M.J.W.³ Denbaars, S.P.⁴ Mishra, U.K.⁵

10
- 20544444882
- H. Xing and U. K. Mishra (unpublished).
- Xing, H.¹ Mishra, U.K.²

11
- 0004005306
- 2nd ed. (Wiley, New York
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), 868 pages.
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

12
- 20544478092
- H. Xing and U. K. Mishra, Int. J. High Speed Electron. Syst. 14, 819 (2004).
- (2004) Int. J. High Speed Electron. Syst. , vol.14 , pp. 819
- Xing, H.¹ Mishra, U.K.²

13
- 20544467120
- S. Heikman and S. Keller (private communication).
- Heikman, S.¹ Keller, S.²

14
- 0003735575
- Adam Hilger, Bristol, England
- B. Tuck, Atomic Diffusion in III-V Semiconductors (Adam Hilger, Bristol, England, 1988) 236 pages.
- (1988) Atomic Diffusion in III-V Semiconductors
- Tuck, B.¹

15
- 84860941074
- Available at http://www.nd.edu/~gsnider/

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.