-
1
-
-
10444238582
-
Narrow linewidth operation of a tunable optically pumped semiconductor laser.
-
Abram, R.H., Gardner, K.S., Riis, E., Ferguson, A.: Narrow linewidth operation of a tunable optically pumped semiconductor laser. Opt. Exp. 12, 5434-5439 (2004)
-
(2004)
Opt. Exp.
, vol.12
, pp. 5434-5439
-
-
Abram, R.H.1
Gardner, K.S.2
Riis, E.3
Ferguson, A.4
-
2
-
-
28844465847
-
Ultraslow light propagation in an inhomogeneously broadened rare-earth ion-doped crystal
-
Baldit, E., Bencheikh, K., Monnier, P., Levenson, J.A., Rouget, V.: Ultraslow light propagation in an inhomogeneously broadened rare-earth ion-doped crystal. Phys. Rev. Lett. 95, 143601-1-143601-4 (2005)
-
(2005)
Phys. Rev. Lett.
, vol.95
, pp. 1436011-1436014
-
-
Baldit, E.1
Bencheikh, K.2
Monnier, P.3
Levenson, J.A.4
Rouget, V.5
-
3
-
-
0037380486
-
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm
-
Boehm, G., Ortsiefer, M., Shau, R., Rosskopf, J., Lauer, C., Maute, M., Köhler, F., Mederer, F., Meyer, R., Amann, M.-C.: InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm. J. Cryst. Growth 251, 748-753 (2003)
-
(2003)
J. Cryst. Growth
, vol.251
, pp. 748-753
-
-
Boehm, G.1
Ortsiefer, M.2
Shau, R.3
Rosskopf, J.4
Lauer, C.5
Maute, M.6
Köhler, F.7
Mederer, F.8
Meyer, R.9
Amann, M.-C.10
-
4
-
-
0033123732
-
Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL
-
Boucart, J., Starck, C., Gaborit, F., Plais, A., Bouche, N., Derouin, E., Remy, J.C., Bonnet-Gamard, J., Goldstein, L., Fortin, C., Carpentier, D., Salet, P., Brillouet, F., Jacquet, J.: Metamorphic DBR and tunnel-junction injection: a CW RT monolithic long-wavelength VCSEL. IEEE J. Sel. Top. Quantum Electron. 5, 520-529 (1999)
-
(1999)
IEEE J. Sel. Top. Quantum Electron.
, vol.5
, pp. 520-529
-
-
Boucart, J.1
Starck, C.2
Gaborit, F.3
Plais, A.4
Bouche, N.5
Derouin, E.6
Remy, J.C.7
Bonnet-Gamard, J.8
Goldstein, L.9
Fortin, C.10
Carpentier, D.11
Salet, P.12
Brillouet, F.13
Jacquet, J.14
-
5
-
-
33947316452
-
Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL
-
Bousseksou, A., Bouchoule, S., El Kurdi, M., Strassner, M., Sagnes, I., Crozat, P., Jacquet, J.: Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL. Opt. Quantum Electron. 38, 1269-1278 (2006)
-
(2006)
Opt. Quantum Electron.
, vol.38
, pp. 1269-1278
-
-
Bousseksou, A.1
Bouchoule, S.2
El Kurdi, M.3
Strassner, M.4
Sagnes, I.5
Crozat, P.6
Jacquet, J.7
-
6
-
-
2942722621
-
Room-temperature continuous-wave laser operation of electrically-pumped 1.55 mu m VECSEL
-
El Kurdi, M., Bouchoule, S., Bousseksou, A., Sagnes, I., Plais, A., Strassner, M., Symonds, C., Garnache, A., Jacquet, J.: Room-temperature continuous-wave laser operation of electrically-pumped 1.55 mu m VECSEL. Electron. Lett. 40, 671-672 (2004)
-
(2004)
Electron. Lett.
, vol.40
, pp. 671-672
-
-
El Kurdi, M.1
Bouchoule, S.2
Bousseksou, A.3
Sagnes, I.4
Plais, A.5
Strassner, M.6
Symonds, C.7
Garnache, A.8
Jacquet, J.9
-
7
-
-
0034409142
-
Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy
-
Garnache, A., Kachanov, A.A., Stoeckel, F., Houdre, R.: Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy. J. Opt. Soc. Am. B 17, 1589-1598 (2000)
-
(2000)
J. Opt. Soc. Am. B
, vol.17
, pp. 1589-1598
-
-
Garnache, A.1
Kachanov, A.A.2
Stoeckel, F.3
Houdre, R.4
-
8
-
-
0031188367
-
Electromagnetically induced transparency
-
Harris, S.E.: Electromagnetically induced transparency. Phys. Today 50, 36-42 (1997)
-
(1997)
Phys. Today
, vol.50
, pp. 36-42
-
-
Harris, S.E.1
-
9
-
-
13544274369
-
High power CW red VECSEL with linearly polarized TEM00 output beam
-
Hastie, J.E., Calvez, S., Dawson, M., Leinonen, T., Laasko, A., Lyytikaïnene, J., Pessa, M.: High power CW red VECSEL with linearly polarized TEM00 output beam. Opt. Exp. 13, 77-81 (2005)
-
(2005)
Opt. Exp.
, vol.13
, pp. 77-81
-
-
Hastie, J.E.1
Calvez, S.2
Dawson, M.3
Leinonen, T.4
Laasko, A.5
Lyytikaïnene, J.6
Pessa, M.7
-
10
-
-
0034266795
-
Passively mode-locked diode-pumped surface-emitting semiconductor laser
-
Hoogland, S., Dhanjal, S., Tropper, A.C., Roberts, J.S., Häring, R., Paschotta, R., Morier-Genoud, F., Keller, U.: Passively mode-locked diode-pumped surface-emitting semiconductor laser. IEEE Photon. Technol. Lett. 12, 1135-1137 (2000)
-
(2000)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 1135-1137
-
-
Hoogland, S.1
Dhanjal, S.2
Tropper, A.C.3
Roberts, J.S.4
Häring, R.5
Paschotta, R.6
Morier-Genoud, F.7
Keller, U.8
-
14
-
-
0001420362
-
Semiconductor wafer bonding via liquid capillarity
-
Liau, Z.L.: Semiconductor wafer bonding via liquid capillarity. Appl. Phys. Lett. 77, 651-653 (2000)
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 651-653
-
-
Liau, Z.L.1
-
15
-
-
25144517341
-
Single-frequency operation of a high-power, long-wavelength semiconductor disk laser
-
Lindberg, H., Larsson, A., Strassner, M.: Single-frequency operation of a high-power, long-wavelength semiconductor disk laser. Opt. Lett. 30, 2260-2262 (2005)
-
(2005)
Opt. Lett.
, vol.30
, pp. 2260-2262
-
-
Lindberg, H.1
Larsson, A.2
Strassner, M.3
-
16
-
-
0037456872
-
-
McInerney, J.G., Mooradian, A., Lewis, A., Shchegrov, A.V., Strzelecka, E.M., Lee, D., Watson, J.P., Liebman, A., Carey, G.P., Cantos, B.D., Hitchens, W.R., Heald, D.: Electron. Lett. 39, 523-524 (2003)
-
(2003)
Electron. Lett.
, vol.39
, pp. 523-524
-
-
McInerney, J.G.1
Mooradian, A.2
Lewis, A.3
Shchegrov, A.V.4
Strzelecka, E.M.5
Lee, D.6
Watson, J.P.7
Liebman, A.8
Carey, G.P.9
Cantos, B.D.10
Hitchens, W.R.11
Heald, D.12
-
17
-
-
23844487386
-
2.5-mW single-mode operation of 1.55-μm buried tunnel junction VCSELs
-
Ortsiefer, M., Baydar, S., Windhorn, K., Böhm, G., Rösskopf, J., Schau, R., Rönneberg, E., Hofmann, W., Amann, M.-A.: 2.5-mW single-mode operation of 1.55-μm buried tunnel junction VCSELs. IEEE Photon. Technol. Lett. 17, 1596-1598 (2005)
-
(2005)
IEEE Photon. Technol. Lett.
, vol.17
, pp. 1596-1598
-
-
Ortsiefer, M.1
Baydar, S.2
Windhorn, K.3
Böhm, G.4
Rösskopf, J.5
Schau, R.6
Rönneberg, E.7
Hofmann, W.8
Amann, M.-A.9
-
18
-
-
0029217436
-
Modeling light vs. current characteristics of long-wavelength VCSELs with various DBR materials
-
Piprek, J., Wenzel, H., Wünsche, H.-J., Braun, D., Henneberger, F.: Modeling light vs. current characteristics of long-wavelength VCSELs with various DBR materials. Proc. SPIE 2399, 605-616 (1995)
-
(1995)
Proc. SPIE
, vol.2399
, pp. 605-616
-
-
Piprek, J.1
Wenzel, H.2
Wünsche, H.-J.3
Braun, D.4
Henneberger, F.5
-
19
-
-
0242301668
-
Efficient frequency doubling of a vertical-extended-cavity surface-emitting laser diode by use of a periodically poled KTP crystal
-
Rafailov, E.U., Sibbett, W., Mooradian, A., McInerney, J.G., Karlsson, H., Wang, S., Laurell, F.: Efficient frequency doubling of a vertical-extended-cavity surface-emitting laser diode by use of a periodically poled KTP crystal. Opt. Lett. 28, 2091-2093 (2003)
-
(2003)
Opt. Lett.
, vol.28
, pp. 2091-2093
-
-
Rafailov, E.U.1
Sibbett, W.2
Mooradian, A.3
McInerney, J.G.4
Karlsson, H.5
Wang, S.6
Laurell, F.7
-
20
-
-
0032606878
-
Intracavity frequency doubling of a diode-pumped external-cavity surface emitting semiconductor laser
-
Raymond, T.D., Alford, W.J., Crawford, M.H., Allerman, A.A.: Intracavity frequency doubling of a diode-pumped external-cavity surface emitting semiconductor laser. Opt. Lett. 24, 1127-1129 (1999)
-
(1999)
Opt. Lett.
, vol.24
, pp. 1127-1129
-
-
Raymond, T.D.1
Alford, W.J.2
Crawford, M.H.3
Allerman, A.A.4
-
21
-
-
0035846012
-
Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature
-
Shau, R., Ortsiefer, M., Rosskopf, J., Böhm, G., Köhler, F., Amann, M.-C.: Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature. Electron. Lett. 37, 1295-1296 (2001)
-
(2001)
Electron. Lett.
, vol.37
, pp. 1295-1296
-
-
Shau, R.1
Ortsiefer, M.2
Rosskopf, J.3
Böhm, G.4
Köhler, F.5
Amann, M.-C.6
-
22
-
-
0029325445
-
Refractive index and loss changes produced by current injection in InGaAs(P)-InGaAsP multiple-quantum-well (MQW) wave-guides
-
Shim, J.I., Yamaguchi, M., Delansay, P., Kitamura, M.: Refractive index and loss changes produced by current injection in InGaAs(P)-InGaAsP multiple-quantum-well (MQW) wave-guides. IEEE J. Sel. Top. Quantum Electron. 1, 408-415 (1995)
-
(1995)
IEEE J. Sel. Top. Quantum Electron.
, vol.1
, pp. 408-415
-
-
Shim, J.I.1
Yamaguchi, M.2
Delansay, P.3
Kitamura, M.4
-
23
-
-
0347415752
-
Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser
-
Symonds, C., Sagnes, I., Oudar, J.-L., Bouchoule, S., Garnache, A., Berggren, J., Strassner, M.: Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser. Opt. Commun. 230, 419-423 (2004)
-
(2004)
Opt. Commun.
, vol.230
, pp. 419-423
-
-
Symonds, C.1
Sagnes, I.2
Oudar, J.-L.3
Bouchoule, S.4
Garnache, A.5
Berggren, J.6
Strassner, M.7
-
24
-
-
3042643202
-
High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror
-
Symonds, C., Dion, J., Sagnes, I., Dainese, M., Strassner, M., Leroy, L., Oudar, J.-L.: High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror. Electron. Lett. 40, 734-735 (2004)
-
(2004)
Electron. Lett.
, vol.40
, pp. 734-735
-
-
Symonds, C.1
Dion, J.2
Sagnes, I.3
Dainese, M.4
Strassner, M.5
Leroy, L.6
Oudar, J.-L.7
-
25
-
-
34547614992
-
High power single-longitudinal-mode OP-VECSEL at 1.55 μm with hybrid metal-metamorphic Bragg mirror
-
Tourrenc, J-P., Bouchoule, S., Khadour, A., Decobert, J., Miard, A., Harmand, J.-C., Oudar, J.-L.: High power single-longitudinal-mode OP-VECSEL at 1.55 μm with hybrid metal-metamorphic Bragg mirror. Electron. Lett. 43, 754-755 (2007)
-
(2007)
Electron. Lett.
, vol.43
, pp. 754-755
-
-
Tourrenc, J.-P.1
Bouchoule, S.2
Khadour, A.3
Decobert, J.4
Miard, A.5
Harmand, J.-C.6
Oudar, J.-L.7
-
26
-
-
0030149737
-
Thermal conductivity of amorphous silicon
-
Wada, H., Kamijoh, T.: Thermal conductivity of amorphous silicon. Jpn. J. Appl. Phys. 35, L648-L650 (1996)
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
-
-
Wada, H.1
Kamijoh, T.2
-
27
-
-
4043106390
-
Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements
-
Zegaoui, M., Harari, J., Vilcot, J.-P., Mollot, E., Decoster, D., Li, H.W., Chazelas, F.: Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements. Electron. Lett. 40, 1019-1020 (2004)
-
(2004)
Electron. Lett.
, vol.40
, pp. 1019-1020
-
-
Zegaoui, M.1
Harari, J.2
Vilcot, J.-P.3
Mollot, E.4
Decoster, D.5
Li, H.W.6
Chazelas, F.7
|