-
1
-
-
0031208646
-
High power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams
-
10.1109/68.605500 1041-1135
-
Kuznetsov, M., Hakimi, F., Sprague, R., and Mooradian, A.: ' High power (>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams ', IEEE Photonics Technol. Lett., 1997, 9, p. 1063-1065 10.1109/68.605500 1041-1135
-
(1997)
IEEE Photonics Technol. Lett.
, vol.9
, pp. 1063-1065
-
-
Kuznetsov, M.1
Hakimi, F.2
Sprague, R.3
Mooradian, A.4
-
2
-
-
79957959968
-
<500fs soliton pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power
-
10.1063/1.1482143 0003-6951
-
Garnache, A., Hoggland, S., Tropper, A., Sagnes, I., Saint-Girons, G., and Roberts, J.: ' <500fs soliton pulse in a passively mode-locked broadband surface-emitting laser with 100mW average power ', Appl. Phys. Lett., 2002, 80, p. 3892-3894 10.1063/1.1482143 0003-6951
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 3892-3894
-
-
Garnache, A.1
Hoggland, S.2
Tropper, A.3
Sagnes, I.4
Saint-Girons, G.5
Roberts, J.6
-
3
-
-
0036712201
-
High-power passively mode-locked semiconductor lasers
-
10.1109/JQE.2002.802111 0018-9197
-
Häring, R., Paschotta, R., Aschwanden, A., Gini, E., Morier-Genoud, F., and Keller, U.: ' High-power passively mode-locked semiconductor lasers ', IEEE J. Quantum Electron., 2002, 38, p. 1268-1275 10.1109/JQE.2002.802111 0018-9197
-
(2002)
IEEE J. Quantum Electron.
, vol.38
, pp. 1268-1275
-
-
Häring, R.1
Paschotta, R.2
Aschwanden, A.3
Gini, E.4
Morier-Genoud, F.5
Keller, U.6
-
4
-
-
25144517341
-
Single-frequency operation of a high-power long-wavelength semiconductor disk laser
-
10.1364/OL.30.002260 0146-9592
-
Lindberg, H., Larsson, A., and Strassner, M.: ' Single-frequency operation of a high-power long-wavelength semiconductor disk laser ', Opt. Lett, 2005, 30, p. 2260-2262 10.1364/OL.30.002260 0146-9592
-
(2005)
Opt. Lett
, vol.30
, pp. 2260-2262
-
-
Lindberg, H.1
Larsson, A.2
Strassner, M.3
-
5
-
-
0347415752
-
Room temperature CW lasing operation of monolithically grown 1.55m vertical external cavity surface emitting laser
-
10.1016/j.optcom.2003.11.023 0030-4018
-
Symonds, C., Sagnes, I., Oudar, J.-L., Bouchoule, S., Garnache, A., Berggren, J., and Strassner, M.: ' Room temperature CW lasing operation of monolithically grown 1.55m vertical external cavity surface emitting laser ', Opt. Commun., 2004, 230, p. 419-423 10.1016/j.optcom.2003.11.023 0030-4018
-
(2004)
Opt. Commun.
, vol.230
, pp. 419-423
-
-
Symonds, C.1
Sagnes, I.2
Oudar, J.-L.3
Bouchoule, S.4
Garnache, A.5
Berggren, J.6
Strassner, M.7
-
6
-
-
2942722621
-
Room-temperature continuous-wave operation of electrically-pumped 1.55m VECSEL
-
10.1049/el:20040445 0013-5194
-
El Kurdi, M., Bouchoule, S., Bousseksou, A., Sagnes, I., Plais, A., Strassner, M., Symonds, C., Garnache, A., and Jacquet, J.: ' Room-temperature continuous-wave operation of electrically-pumped 1.55m VECSEL ', Electron. Lett, 2004, 40, p. 671-672 10.1049/el:20040445 0013-5194
-
(2004)
Electron. Lett
, vol.40
, pp. 671-672
-
-
El Kurdi, M.1
Bouchoule, S.2
Bousseksou, A.3
Sagnes, I.4
Plais, A.5
Strassner, M.6
Symonds, C.7
Garnache, A.8
Jacquet, J.9
-
7
-
-
0001420362
-
Semiconductor wafer bonding via liquid capillarity
-
10.1063/1.127074 0003-6951
-
Liau, Z.L.: ' Semiconductor wafer bonding via liquid capillarity ', Appl. Phys. Lett., 2000, 77, p. 651-653 10.1063/1.127074 0003-6951
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 651-653
-
-
Liau, Z.L.1
-
8
-
-
2942597753
-
0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550nm
-
10.1049/el:20040435 0013-5194
-
Lindberg, H., Strassner, M., Gerster, E., and Larsson, A.: ' 0.8W optically pumped vertical external cavity surface emitting laser operating CW at 1550nm ', Electron. Lett., 2004, 40, p. 601-602 10.1049/el:20040435 0013-5194
-
(2004)
Electron. Lett.
, vol.40
, pp. 601-602
-
-
Lindberg, H.1
Strassner, M.2
Gerster, E.3
Larsson, A.4
-
9
-
-
3042643202
-
High performance 1.55m vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror
-
10.1049/el:20040535 0013-5194
-
Symonds, C., Dion, J., Sagnes, I., Daines, M., Strassner, M., Leroy, L., and Oudar, J.-L.: ' High performance 1.55m vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror ', Electron. Lett., 2004, 40, p. 734-735 10.1049/el:20040535 0013-5194
-
(2004)
Electron. Lett.
, vol.40
, pp. 734-735
-
-
Symonds, C.1
Dion, J.2
Sagnes, I.3
Daines, M.4
Strassner, M.5
Leroy, L.6
Oudar, J.-L.7
-
10
-
-
0033123732
-
Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL
-
10.1109/2944.788414 1077-260X
-
Boucart, J., Starck, C., Plais, A., Bouche, N., Derouin, E., Remy, J.C., Bonnet-Gamard, J., Goldstein, L., Fortin, C., Carpentier, D., Salet, P., Brillouet, F., and Jacquet, J.: ' Metamorphic DBR and tunnel-junction injection: a CW RT monolithic long-wavelength VCSEL ', IEEE J. Sel. Top. Quantum Electron., 1999, 5, p. 520-529 10.1109/2944.788414 1077-260X
-
(1999)
IEEE J. Sel. Top. Quantum Electron.
, vol.5
, pp. 520-529
-
-
Boucart, J.1
Starck, C.2
Plais, A.3
Bouche, N.4
Derouin, E.5
Remy, J.C.6
Bonnet-Gamard, J.7
Goldstein, L.8
Fortin, C.9
Carpentier, D.10
Salet, P.11
Brillouet, F.12
Jacquet, J.13
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